Performance and reliability ofa 2 transistor Si nanocrystal nonvolatile memory(NVM)are investigated.A good performance of the memory cell has been achieved,including a fast program/erase(P/E)speed under low voltages,an excellent data retention(maintaining for 10 years)and good endurance with a less threshold voltage shift of less than 10％ after 104 P/E cycles.The data show that the device has strong potential for future embedded NVM applications.
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