A 3-5 GHz broadband flat gain differential low noise amplifier (LNA) is designed for the impulse radio uitra-wideband (IR-UWB) system. The gain-flatten technique is adopted in this UWB LNA. Serial and shunt peaking techniques are used to achieve broadband input matching and large gain-bandwidth product (GBW). Feedback networks are introduced to further extend the bandwidth and diminish the gain fluctuations. The prototype is fabricated in the SMIC 0.18 μm RF CMOS process. Measurement results show a 3-dB gain bandwidth of 2.4-5.5 GHz with a maximum power gain of 13.2 dB. The excellent gain flatness is achieved with ±0.45 dB gain fluctuations across 3-5 GHz and the minimum noise figure (NF) is 3.2 dB over 2.5-5 GHz. This circuit also shows an excellent input matching characteristic with the measured S11 below-13 dB over 2.9-5.4 GHz. The input-referred 1-dB compression point (IPldB) is -11.7 dBm at 5 GHz. The differential circuit consumes 9.6 mA current from a supply of 1.8 V.
参考文献
| [1] | Siwiak K,Withington P,Phelan S.Ultra-wide band radio:the emergence of an important new technology.IEEE VTC,2001 |
| [2] | Andersson S,Svensson C,Drugge O.Wideband LNA for a mulistandard wireless receiver in 0.18μm CMOS.Proc ESSCIRC,2003:655 |
| [3] | Kim C W,Kang M S,Anh P T,et al.An ultra-wideband COMS low noise amplifier for 3-5 GHz UWB system.IEEE J Solid-State Circuits,2005,40(2):544 |
| [4] | Bevilacqua A,Niknejad A M.An ultrawideband CMOS LNA for 3.1-10.6 GHz wireless receiver.IEEE ISSCC Dig Teeh Paper,2004:382 |
| [5] | Reiha M T,Long J R.A 1.2 V reactive-feedback 3.1-10.6 GHz low-noise amplifier in 0.13μm CMOS.IEEE J Solid-State Circuits,2007,42(5):1023 |
| [6] | Liao C F,Liu S I.A broadband noise-canceling CMOS LNA for 3.1-10.6-GHz UWB receivers.JSSC,2007,42:329 |
| [7] | Chen Y J,Huang Y I.Development of integrated broadband CMOS low noise amplifiers.Circuits and Systems I,2007:2120 |
| [8] | Lee T H.The design of CMOS radio frequency integrated circuits.Cambridge,2006 |
| [9] | Chen S C,Wang R L,Kung M L,et al.An integrated CMOS low noise amplifier for 3-5 GHz UWB applications.IEEE Conference Electron Devices and Solid-State Circuits,2005:225 |
| [10] | Bevilacqua A,Sandner C,Gerosa A.A fully integrated differential CMOS LNA for 3-5 GHz ultrawideband wireless receivers.IEEE Microwave and Wireless Components Letters,2006,16(3):134 |
| [11] | Chang C P,Yen C C,Chuang H R.A 0.18-μm 2.4-6 GHz CMOS broadband differential LNA for WLAN and UWB receiver.2005:645 |
| [12] | Abidi A A,Leete J C.De-embedding the noise figure of differen-tial amplifiers.IEEE J Solid-State Circuits,1999,34:882 |
| [13] | Chang T,Chert J,Rigge L,et al.A packaged and ESD -protected inductorless 0.1-9.2 GHz wideband CMOS LNA.IEEE Microwave and Wireless Components Letters,2008,18(6):416 |
| [14] | Mohan S S,Hershenson M D M,Boyd S P,et al.Bandwidth extension in CMOS with optimized on-chip inductors.IEEE J SolidState Circuits,2000,35(3):346 |
| [15] | Huang Z Y,Huang C C,Chen C C.A CMOS low-noise amplifier with impedance feedback for ultra-wideband wireless receiver system.IEEE International Symposium on VLSI-DAT,2008:51 |
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