This Daper describes the first domestic Ku-band power AlGaN/GaN HEMT fabricated on a sapphire substrate.The device with a gate width of 0.5 mm and a gate length of 0.35 μm has exhibited an extrinsic current gain cutoff frequency of 20 GHz and an extrinsic maximum frequency of oscillation of 75 GHz.Under V_(DS)=30 V, CW operating conditions at 14 GHz,the device exhibits a linear gain of 10.4 dB and a 3-dB-gain-compressed output power of 1.4 W with a Dower added efficiency of 41%.Under pulse operating conditions,the linear gain is 12.8 dB and the 3-dB-compressed output power is 1.7 W The power density reaches 3.4 W/mm.
参考文献
| [1] | Vetur R,Wei Y,Green D S,et al.High power,high efficiency,AlGaN/GaN HEMT technology for wireless base applications.IEEE MTT-S International Microwave Symposium Digest.2005.1:487 |
| [2] | Takagi K,Kashiwabara Y,Masuda K,et al.Ku-band AlGaN/GaN HEMT with over 30 W.Proceedings of the 2nd European Microwave Integrated Circuits Conference.2007:169 |
| [3] | Micovic M,Kurdoghilian A,Hashimoto P'et al.GaN HFET for W-band power applications.IEEE International Electron Devices Meeting,2006:1 |
| [4] | Feng Zhen,Zhang Zhiguo,Wang Yong,et al.A recessed AlGaN/GaN HEMT with high output power in the X band.Chinese Journal of Semiconductors,2007,28(11):1773(in Chinese) |
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