以阴极电弧法,分别于硅基材与铜纳米线(CuNWs)/硅基材(其中铜纳米线系阳极氧化铝(AAO)模板技术成长于硅基材上)沉积非晶碳膜,,分别以扫描电子显微镜(SEM)、原子力电子显微镜(AFM)和X光电子光谱仪(XPS)表征了非晶碳膜/铜纳米线/硅基材与非品碳膜/硅基材两者之表面形貌、粗糙度、结构及键结等物理特性.并比较两者之电子场发射特性.研究结果显示:两者都拥有低起始电场及高电流密度,其中非品碳膜/铜纳米线/硅基材的场发射起始电压为3.75 V/μm优于非品碳膜/硅基材的15 V/μm,因此非晶碳膜/铜纳米线/硅基材更适用于场发射平面显示器(FED)之发射子,可应用于高稳定性及低成本之场发射平面显示器之研发.
The field emission properties of amorphous carbon/copper nanowire (CuNW)/Si composites have been in-vestigated. The CuNWs (50-80nm in diameters) were deposited anodically within the pores of a porous anodic alumi-num oxide (AAO) nano-template by electrolysis of a CuSO4-H2 SO4 solution at room temperature using DC current. Two kinds of structure, amorphous carbon/Si and amorphous carbon/CuNWs/Si , were used. Both of them can emit electrons in vacuum towards an anode at a very low tum-on field. Field emission from the amorphous carbon/CuNWs/Si shows a fourfold decrease in turn-on field compared with the amorphous carbon/Si. Results indicated that the electrons were emitted under the effect of an enhanced field because of the geometry of the amorphous carbon sample.
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