采用纯 Al 片表面浸 Zn 后再电镀厚 Cu 层的方法制备 Cu/Al 层状复合材料。在473~673 K 温度范围内对该复合材料进行退火,研究退火过程中 Cu/Al 界面扩散与反应、界面金属间化合物(IMCs)层的长大动力学以及Cu/Al 层状复合材料电阻率。结果表明,经过473 K、360 h 的退火处理,未观察到 Cu?Al IMCs 层,显示 Zn 中间层能有效抑制 Cu/Al 界面扩散。可是,当复合材料经573 K 及以上温度退火时,Zn 层中的 Zn 原子主要向 Cu 中扩散,从 Al 侧到 Cu 侧形成 CuAl2/CuAl/Cu9Al4三层结构的反应产物。IMC 层遵循扩散控制的生长动力学,Cu/Al复合材料的电阻率随退火温度及时间的增加而增大。
Cu/Al laminar composite was prepared by dipping Zn layer and then electroplating Cu thick layer on pure Al sheet. During annealing the Cu/Al composites at temperature from 473 to 673 K, the Cu/Al interfacial diffusion and reaction and its kinetics and also the electrical resistivity of the composites were studied. The results show that no Cu?Al IMC layer is observable as the composites are annealed at 473 K for time till 360 h, indicating that the Zn intermediate layer can effectively suppress the Cu/Al interfacial diffusion. However, as the composites are annealed at 573 K and above, Zn atoms in the Zn layer dissolve into the Cu layer. Tri-layered reaction product of CuAl2/CuAl/Cu9Al4 then forms from the Al side to the Cu side. The IMC layer follows the diffusion-controlled growth kinetics. Electrical resistivity of the Cu/Al composites increases with the increase of the annealing temperature and time.
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