通过添加Cr3C2和TaC晶粒长大抑制剂，采用等离子体烧结技术制备WC?Co金属陶瓷。采用扫描电镜、X射线衍射、密度测定、硬度测试、断裂韧性测试和弹性模量测试技术表征放电等离子烧结体。在相同的工艺参数下，与不添加WC?Co抑制剂的金属陶瓷进行了比较。结果表明，添加Cr3C2和 TaC抑制剂能提高WC?Co金属陶瓷的硬度和断裂韧性，且添加Cr3C2的陶瓷其晶粒生长抑制性能比添加TaC的更好。WC?5Co?2Cr3C2金属陶瓷的最佳硬度和断裂韧性分别为HV30(2105±38)和(8.3±0.2) MPa·m1/2。
Spark plasma sintering was successfully used to produce WC?Co cermets with the addition of Cr3C2and TaC grain growth inhibitors. The spark plasma sintered compacts were investigated by scanning electron microscopy, X-ray diffraction analysis, density measurements, hardness tests, fracture toughness tests and elastic modulus tests. The results were comparedwithan inhibitor-free WC?Co cermet consolidated under the same process parameters. By using Cr3C2and TaC additives, it is possible to improve the hardness and fracture toughness of WC?Co cermets, but Cr3C2has better grain growth inhibition propertythan that of TaC. The best combination of hardness (HV30(2105±38)) and fracture toughness ((8.3±0.2)MPa·m1/2) was obtained by the WC?5Co?2Cr3C2 cermet.
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