Epitaxial growth and characterization of Gd2O3-doped HfO2 film on Ge (001) substrates with zero interface layer

稀土学报(英文版), 2013, (11): 1092-1095. doi: 10.1016/S1002-0721(12)60409-8

张心强 ^1, , 屠海令 ^2, , 魏峰 ^3, , 熊玉华 ^4, , 杨萌萌 ^5, , 赵洪滨 ^6, , 杜军 ^7, , 王文武 ^8,

1.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088, China

2.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088, China

3.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088, China

4.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088, China

5.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088, China

6.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088, China

7.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088, China

8.Key Laboratory of Microelectronics Devices and In-tegrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

基金项目: National Science and Technology Major Pro-jects(2009ZX02039-005,51102020,51202013) National Natural Science Foundation of China(50932001)

Epitaxial growth and characterization of Gd2O3-doped HfO2 film on Ge (001) substrates with zero interface layer

ZHANG Xinqiang ^1, , TU Hailing ^2, , WEI Feng ^3, , XIONG Yuhua ^4, , YANG Mengmeng ^5, , ZHAO Hongbin ^6, , DU Jun ^7, , WANG Wenwu ^8,

1.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088, China

2.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088, China

3.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088, China

4.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088, China

5.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088, China

6.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088, China

7.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088, China

8.Key Laboratory of Microelectronics Devices and In-tegrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Keywords： dielectric material

The GHO (Gd2O3-doped HfO2) films were epitaxially grown on Ge (001) substrates adopting cube-on-cube mode with zero interface layer using pulsed laser deposition (PLD). Reflection high-energy electron diffraction (RHEED) and high-resolution transmission electron microscopy (HRTEM) observation revealed a sharp interface of GHO/Ge and orientation relationship corre-sponding to (001)GHO//(001)Ge and [011] GHO//[011]Ge. The band offset for GHO/Ge stack was evaluated to be 3.92 eV for va-lence band and 1.38 eV for conduction band by X-ray photoelectron spectrum. Small equivalent oxide thickness (0.49 nm) and inter-face state density (7×1011 cm-2) were achieved from Au/Ti/GHO/Ge/Al capacitors.

参考文献

[1]	Ogawa A;Iwamoto K;Ota H;Morita Y,Ikeda A,Na-batame T,Toriumi A .0.6 nm-EOT high-k gate stacks with HfSiOx interfacial layer grown by solid-phase reaction between HfO2 and Si substrate[J].Microelectronic Engineering,2007,84(9-10):1861.
[2]	Ribes G.;Mitard J.;Denais M.;Bruyere S.;Monsieur F.;Parthasarathy C.;Vincent E.;Ghibaudo G. .Review on high-k dielectrics reliability issues[J].IEEE transactions on device & materials reliability,2005(1):5-19.
[3]	CHENG Xuerui,WANG Yongqiang,QI Zeming,ZHANG Guobin,WANG Yuyin,SHAO Tao,ZHANG Wenhua.Band offsets between amorphous La2Hf2O7 and silicon[J].稀土学报（英文版）,2012(08):847-850.
[4]	L. Lin;J. Robertson .Atomic mechanism of flat-band voltage shifts by La_(2)O_(3) and Al_(2)O_(3) in gate stacks[J].Applied Physics Letters,2009(1):012906-1--012906-3-0.
[5]	John Robertson .Maximizing performance for higher K gate dielectrics[J].Journal of Applied Physics,2008(12):124111-1-124111-7-0.
[6]	S. V. Jagadeesh Chandra;Mi-Ra Jeong;Kyu-Hwan Shim .Effective Metal Work Function of Pt Gate Electrode in Ge Metal Oxide Semiconductor Device[J].Journal of the Electrochemical Society,2010(5):H546-H550.
[7]	Krishna Saraswat;Chi On Chui;Tejas Krishnamohan;Donghyun Kim;Ammar Nayfeh;Abhijit Pethe .High performance germanium MOSFETs[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2006(3):242-249.
[8]	Gusev EP;Shang H;Copel M;Gribelyuk M;D'Emic C;Kozlowski P;Zabel T .Microstructure and thermal stability of HfO2 gate dielectric deposited on Ge(100)[J].Applied physics letters,2004(12):2334-2336.
[9]	Molle A;Spiga S;Bhuiyan M N K;Tallarida G,Perego M,Wiemer C,Fanciulli M .Atomic oxygen-assisted molecu-lar beam deposition of Gd2O3 films for ultra-scaled Ge-based electronic devices[J].Materials Science in Semiconductor Processing,2008,11(5-6):236.
[10]	M K Bera;J Song;P Ahmet;K Kakushima;K Tsutsui;N Sugii;T Hattori;H Iwai .Yttrium-scandium oxide as high-k gate dielectric for germanium metal-oxide-semiconductor devices[J].Semiconductor Science and Technology,2010(6):9.1-9.7.
[11]	Liu WL;Lee PF;Dai JY;Wang J;Chan HLW;Choy CL;Song ZT;Feng SL .Self-organized Ge nanocrystals embedded in HfAlO fabricated by pulsed-laser deposition and application to floating gate memory[J].Applied physics letters,2005(1):3110-1-3110-3-0.
[12]	M.-H. Cho;Y. S. Roh;C. N. Whang;K. Jeong;S. W. Nahm;D.-H. Ko;J. H. Lee;N. I. Lee;K. Fujihara .Thermal stability and structural characteristics of HfO_(2) films on Si (100) grown by atomic-layer deposition[J].Applied physics letters,2002(3):472-474.
[13]	Local epitaxial growth of ZrO_(2) on Ge (100) substrates by atomic layer epitaxy[J].Applied physics letters,2003(13):2647-2649.
[14]	Wei F;Tu H L;Du J .Twin-free(111)-oriented epitaxial Nd2Hf2O7 thin films on Ge(111)for high-k dielectrics[J].Journal of Physics D:Applied Physics,2009,42(08):18301.
[15]	Ushakov SV;Navrotsky A;Tangeman JA;Helean KB .Energetics of defect fluorite and pyrochlore phases in lanthanum and gadolinium hafnates[J].Journal of the American Ceramic Society,2007(4):1171-1176.
[16]	Dalapati G K;Tong Y;Loh W Y;Mun H K,Cho B J .Im-pact of interfacial layer control using Gd2O3 in HfO2 gate dielectric on GaAs[J].Applied Physics Letters,2009,90(01):183510.
[17]	Xinqiang Zhang .Cube-on-cube epitaxy of Gd_2O_3-doped HfO_2 films on Si(100) substrates by pulse laser deposition[J].Journal of Crystal Growth,2009(1):41.
[18]	Yuhua Xiong;Hailing Tu;Jun Du;Mei Ji;Xinqiang Zhang;Lei Wang .Band structure and electrical properties of Gd-doped HfO_(2) high k gate dielectric[J].Applied physics letters,2010(1):012901-1-012901-3.
[19]	R.K. Nahar;Vikram Singh .Improved thermal stability of nitrogen annealed sputtered hafnium oxide thin films for VLSI technology[J].Microelectronics international: Journal of ISHM--Europe, the Microelectronics Society--Europe,2010(2):93-97.

上一张下一张

上一张下一张

计量

下载量()
访问量()

作者相关

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%