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  4. Dielectric thin films for GaN-based high-electron-mobility transistors

稀有金属, 2015, 34(6): 371-380. doi: 10.1007/s12598-015-0451-3

Yan-Rong Li 1, , Xing-Zhao Liu 2, , Jun Zhu 3, , Ji-Hua Zhang 4, , Lin-Xuan Qian 5, , Wan-Li Zhang 6,

1.State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China

2.State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China

3.State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China

4.State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China

5.State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China

6.State Key Laboratory of Electronic Thin Films and Integrated Devices,School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China,Chengdu 610054,China

基金项目:   The work was financially supported by the National Nature Science Foundation of China (No.50932002) and the Research Foundation for the Doctoral Program of Higher Education of China (No.2012018530003).  

Dielectric thin films for GaN-based high-electron-mobility transistors

Keywords： GaN-based HEMTs

参考文献

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