Thermoelectric transport properties and structure of Mg2Si0.8Sn0.2 prepared by ECAS under different current intensities

稀有金属, 2014, 33(2): 215-218. doi: 10.1007/s12598-013-0184-0

^1, , ^2, , ^3, , ^4, , ^5, , ^6,

1.Department of Material Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China

2.Department of Material Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China

3.Department of Material Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China

4.Department of Material Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China

5.Department of Material Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China

6.Department of Material Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China

Thermoelectric transport properties and structure of Mg2Si0.8Sn0.2 prepared by ECAS under different current intensities

Wen-Hao Fan ^1, , Yuan-Yuan Jiao ^2, , Rui-Xue Chen ^3, , Di-Yang Wu ^4, , Qing-Sen Meng ^5, , Shao-Ping Chen ^6,

1.Department of Material Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China

2.Department of Material Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China

3.Department of Material Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China

4.Department of Material Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China

5.Department of Material Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China

6.Department of Material Science and Engineering, Taiyuan University of Technology, Taiyuan 030024, China

Keywords： Thermoelectric materials

参考文献

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