Resistive switching characteristics of Dy2O3 film with a Pt nanocrystal embedding layer formed by pulsed laser deposition

稀有金属（英文版）, 2014, 33(1): 75-79. doi: 10.1007/s12598-013-0159-1

^1, , ^2, , ^3, , ^4, , ^5, , ^6,

1.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088,People's Republic of China

2.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088,People's Republic of China

3.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088,People's Republic of China

4.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088,People's Republic of China

5.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088,People's Republic of China

6.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088,People's Republic of China

基金项目: the Important National Science & Technology Specific Projects(2009ZX02039-005) This study was financially supported by the National Natural Science Foundation of China(.50932001,51102020,and 51202013)

Resistive switching characteristics of Dy2O3 film with a Pt nanocrystal embedding layer formed by pulsed laser deposition

Hong-Bin Zhao ^1, , Hai-Ling Tu ^2, , Feng Wei ^3, , Xin-Qiang Zhang ^4, , Yu-Hua Xiong ^5, , Jun Du ^6,

1.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088,People's Republic of China

2.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088,People's Republic of China

3.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088,People's Republic of China

4.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088,People's Republic of China

5.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088,People's Republic of China

6.Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing 100088,People's Republic of China

Keywords： Dy2O3

参考文献

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