Oxidation-based wet-etching method for AlGaN/GaN structure with different oxidation times and temperatures

稀有金属（英文版）, 2015, 34(1): 1-5. doi: 10.1007/s12598-013-0148-4

Yang Liu ^1, , Jin-Yan Wang ^2, , Zhe Xu ^3, , Jin-Bao Cai ^4, , Mao-Jun Wang ^5, , Min Yu ^6, , Bing Xie ^7,

1.Wide Bandgap Semiconductor Laboratory, Institute of Microelectronics, Peking University, Beijing 100871, China

2.Wide Bandgap Semiconductor Laboratory, Institute of Microelectronics, Peking University, Beijing 100871, China

3.Wide Bandgap Semiconductor Laboratory, Institute of Microelectronics, Peking University, Beijing 100871, China

4.Wide Bandgap Semiconductor Laboratory, Institute of Microelectronics, Peking University, Beijing 100871, China

5.Wide Bandgap Semiconductor Laboratory, Institute of Microelectronics, Peking University, Beijing 100871, China

6.Wide Bandgap Semiconductor Laboratory, Institute of Microelectronics, Peking University, Beijing 100871, China

7.Wide Bandgap Semiconductor Laboratory, Institute of Microelectronics, Peking University, Beijing 100871, China

基金项目: This work was financially supported by the National Natural Science Foundation of China (Nos.60406004,60890193,and 60736033),and the National Key Micrometer/Nanometer Processing Laboratory.

Oxidation-based wet-etching method for AlGaN/GaN structure with different oxidation times and temperatures

Keywords： Wet-etching

参考文献

[1]	Mikulics, M.;Fox, A.;Marso, M.;Grützmacher, D.;Donoval, D.;Kordo?, P. .Electrical and structural characterization of AlGaN/GaN field-effect transistors with recessed gate[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2012(6):754-756.
[2]	Sun, H.;Alt, A. R.;Tirelli, S.;Marti, D.;Benedickter, H.;Piner, E.;Bolognesi, C. R. .Nanometric AlGaN/GaN HEMT Performance with Implant or Mesa Isolation[J].IEEE Electron Device Letters,2011(8):1056-1058.
[3]	B.J. KIM;J.W. LEE;H.S. PARK .Wet Etching of (0001 ) GaN/Al_2O_3 Grown by MOVPE[J].Journal of Electronic Materials,1998(5):L32-L34.
[4]	Heo K;Cho E;Yang JE;Kim MH;Lee M;Lee BY;Kwon SG;Lee MS;Jo MH;Choi HJ .Large-Scale Assembly of Silicon Nanowire Network-Based Devices Using Conventional Microfabrication Facilities[J].Nano letters,2008(12):4523-4527.
[5]	Cundiff ST;Knox WH;Baumann FH;EvansLutterodt KW;Tang MT;Green ML;vanDriel HM;UNIV TORONTO DEPT PHYS TORONTO ON M5S 1A7 CANADA. .Si/SiO2 interface roughness: Comparison between surface second harmonic generation and x-ray scattering[J].Applied physics letters,1997(11):1414-1416.
[6]	Y. Song;S. Dhar;L. C. Feldman;G. Chung;J. R. Williams .Modified Deal Grove model for the thermal oxidation of silicon carbide[J].Journal of Applied Physics,2004(9):4953-4957.

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Oxidation-based wet-etching method for AlGaN/GaN structure with different oxidation times and temperatures

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