Growth and characterizations of CdGeAs2 single crystal by descending crucible with rotation method

^1, , ^2, , ^3, , ^4, , ^5, , ^6, , ^7,

1.Department of Materials Science, Sichuan University,Chengdu 610064, China

2.Department of Materials Science, Sichuan University,Chengdu 610064, China

3.Department of Materials Science, Sichuan University,Chengdu 610064, China

4.Department of Materials Science, Sichuan University,Chengdu 610064, China

5.Department of Materials Science, Sichuan University,Chengdu 610064, China

6.Department of Materials Science, Sichuan University,Chengdu 610064, China

7.Department of Materials Science, Sichuan University,Chengdu 610064, China

1.Department of Materials Science, Sichuan University,Chengdu 610064, China

2.Department of Materials Science, Sichuan University,Chengdu 610064, China

3.Department of Materials Science, Sichuan University,Chengdu 610064, China

4.Department of Materials Science, Sichuan University,Chengdu 610064, China

5.Department of Materials Science, Sichuan University,Chengdu 610064, China

6.Department of Materials Science, Sichuan University,Chengdu 610064, China

7.Department of Materials Science, Sichuan University,Chengdu 610064, China

[1]	Nagashio K;Watcharapasorn A;Zawilski KT;DeMattei RC;Feigelson RS;Bai L;Giles NC;Halliburton LE;Schunemann PG .Correlation between dislocation etch pits and optical absorption in CdGeAs2[J].Journal of Crystal Growth,2004(2/4):195-206.
[2]	何知宇,赵北君,朱世富,陈宝军,李佳伟,张熠,杜文娟.CdGeAs2多晶合成与单晶生长研究[J].无机材料学报,2010(11):1195-1198.
[3]	Bai LH.;Poston JA.;Schunemann PG.;Nagashio K.;Feigelson RS.;Giles NC. .Luminescence and optical absorption study of p-type CdGeAs2[J].Journal of Physics. Condensed Matter,2004(8):1279-1286.
[4]	Bai LH;Xu CC;Schunemann PG;Nagashio K;Feigelson RS;Giles NC .Urbach rule used to explain the variation of the absorption edge in CdGeAs2 crystals[J].Journal of Physics. Condensed Matter,2005(3):549-558.

上一张下一张

计量

作者相关

文章评分

材料期刊网