The effects of the modification of electrode/ceramic interfaces through a chemical solution deposition-derived PbO buffer layer on the fatigue endurance of lead zirconate titanate (PZT) thin films were investigated. The grain size and the surface roughness of the PZT films increased through PbO interfacial modification. Moreover, the PZT films with PbO interracial modification had a better crystallographic strucrare and no evident secondary phases were observed. While the remanent polarization and dielectric constant were reduced, the fatigue endurance was improved. Based on the results, the mechanism for the fatigue endurance improvement was discussed.
参考文献
[1] | Scott J.F;Araujo C.A .Ferroelectric memories[J].Science,1989,246(4936):1400. |
[2] | Teowee G;McCarthy F.S;McCarthy K.C;Dietz B.H,and Uhlmann D.R .Pyroelectric properties of sol-gel derived PZT thin films with various Zr/Ti ratios[J].Integrated Ferroelectrics,1998,22(1-4):431. |
[3] | Scott J.F;Araujo C.A;Meadows H.B;McMillan L.D,and Shawabkeh A .Radiation effects on ferroelectric thin-film memories:retention failure mechanisms[J].Journal of Applied Physics,1989,66(03):1444. |
[4] | Jiang-Li Cao;Axel Solbach;Uwe Klemradt;Thomas Weirich;Joachim Mayer;Ulrich Bottger;Peter J. Schorn;Rainer Waser .Density inhomogeneity in ferroelectric thin films[J].Applied physics letters,2006(5):052901-1-052901-3-0. |
[5] | X. M. Lu;F. Schlaphof;S. Grafstrom;C. Loppacher;L. M. Eng;G. Suchaneck;G. Gerlach .Scanning force microscopy investigation of the Pb(Zr_(0.25)Ti_(0.75))O_(3)/Pt interface[J].Applied physics letters,2002(17):3215-3217. |
[6] | Jiang A.Q;Wang C;Cheng B.L;Chen Z.H .Experimental determination of interracial-layer thickness from polarization-voltage hysteresis loops in Pb(Zr0.4Ti0.6)O3 thin films[J].Applied Physics Letters,2005,86(20):202904. |
[7] | Larsen P.K;Dormans G.J.M;Taylor D.J;van Veldhoven P.J .Ferroelectric properties and fatigue of PbZr0.51Ti0.49O3 thin films of varying thickness:blocking layer model[J].Journal of Applied Physics,1994,76(04):2405. |
[8] | Cao JL;Solbach A;Klemradt U;Weirich T;Mayer J;Horn-Solle H;Bottger U;Schorn PJ;Schneller T;Waser R .Structural investigations of Pt/TiOx electrode stacks for ferroelectric thin film devices[J].Journal of Applied Physics,2006(11):14107-1-14107-7-0. |
[9] | Jae Hyuk Jang;Ki Hyun Yoon .Electric fatigue properties of sol-gel-derived Pb(Zr,Ti)O_(3)/PbZrO_(3) multilayered thin films[J].Applied physics letters,1999(1):130-132. |
[10] | Alkoy EM;Uchiyama K;Shiosaki T;Alkoy S .Improving fatigue resistance of Pb(Zr,Ti)O-3 thin films by using PbZrO3 buffer layers[J].Journal of Applied Physics,2006(10):6106-1-6106-3-0. |
[11] | Bouregba R.;Vilquin B.;Murray H.;Poullain G. .Orientation control of textured PZT thin films sputtered on silicon substrate with TiOx seeding[J].Materials Research Bulletin: An International Journal Reporting Research on Crystal Growth and Materials Preparation and Characterization,2000(9):1381-1390. |
[12] | Che L.J;Cheng J.R;Yu S.W;Meng Z.Y .The effect of LaNiO3 buffer layer thickness on the electric properties of Pb(Zr0.53Ti0.47)O3 thin films deposited on titanium foils[J].Materials Letters,2007,61(14-15):3068. |
[13] | Shih WC;Yen ZZ;Liang YS .Preparation of highly C-axis-oriented PZT films on Si substrate with MgO buffer layer by the sol-gel method[J].The journal of physics and chemistry of solids,2008(2/3):593-596. |
[14] | Wang SW.;Shang SX.;Huang J.;Wang Z.;Wang M.;Wang H. .PZT thin films prepared by chemical solution decomposition using a Bi2Ti2O7 buffer layer[J].Journal of Crystal Growth,2000(4):388-392. |
[15] | Du XF.;Chen IW. .Fatigue of Pb(Zr0.53Ti0.47)O-3 ferroelectric thin films[J].Journal of Applied Physics,1998(12):7789-7798. |
[16] | Cao JL;Solbach A;Klemradt U;Weirich T;Mayer J;Bottger U;Ellerkmann U;Schorn PJ;Gerber P;Waser R .Effects of thermal annealing on the structure of ferroelectric thin films[J].Journal of the American Ceramic Society,2006(4):1321-1325. |
[17] | Lou XJ;Zhang M;Redfern SAT;Scott JF .Local phase decomposition as a cause of polarization fatigue in ferroelectric thin films[J].Physical review letters,2006(17):7601-1-7601-4-0. |
[18] | Cao, J.-L.;Ren, Y.-B.;Peng, L.;Qiao, L.;Gu, H.-W.;Li, T.;Yue, Z.;Klemradt, U. .Evidences for interfacial phase decomposition in ferroelectric thin films during fatigue[J].Electrochemical and solid-state letters,2010(11):G102-G104. |
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