A resistance random access memory (RRAM) with a structure of Ag/ZnMn2O4/p-Si was fabricated by magnetron sputtering method. Reliable and repeated switching of the resistance of ZnMn2O4 iflms was obtained between two well-deifned states of high and low resistance with a narrow dispersion and 3V switching voltages. Resistance ratio of the high resistance state and low resistance state was found in the range of around 103 orders of magnitude and up to about 103 test cycles. The retention time of Ag/ZnMn2O4/p-Si device is longer than 106 seconds and the resistance ratio between two states remains higher than 103 at room temperature, showing a remarkable reliability performance of the RRAM devices for nonvolatile memory application. The equivalent simulation circuits for HRS (high resistance state) and LRS (low resistance state) were also studied by impedance spectroscopy.
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