材料期刊网

Ti3SiC2 combines many of the merits of both metals and ceramics and has potential in diverse high temperature applications. However, Tic always exists as an impurity phase, which is deleterious to the high-temperature oxidation resistance of Ti3SiC2. Although many attempts have been made, it is difficult to eliminate Tic from Ti3SiC2 due to the close structural relations between the two compounds. In this paper we describe our innovative work to prepare Tic free Ti3SiC2 by the substitution of a small amount of Si with Al. The substitution of Si with Al resulted in the formation of a Ti3Si1-xAlxC2 solid solution. The mechanical properties of the Al doped Ti3SiC2 are close to those of Ti3SiC2, but the oxidation resistance is significantly improved due to the formation of a protective Al2O3 layer during high-temperature oxidation.