ZnO:AI (ZAO) films were deposited on glass substrates by a reactive mid-frequency sputtering system. The microstructural, electrical, and optical properties of ZAO films were investigated. It was observed that the polycrystalline film was (0 0 2 n)textured with columnar structure. The minimum resistivity was 1.39 x 10(-4) Omegacm with a carrier concentration of 1.58 x 10(21) cm(-3) and a Hall mobility of 28.2 cm(2) V-1 s(-1), correspondingly with the c-axis nearly equal to the value of ZnO powder and the minimum mechanical stress therein. The average transmittance of 80.8% in the visible range and infrared reflectance of over 86% in the 1600-4400 cm(-1) interval were obtained. The ZAO films were used as the transparent anodes to fabricate light-emitting diodes, and a luminance efficiency of 2.09 cd A(-1) was measured at a current density of 5.38 A m(-2). (C) 2004 Kluwer Academic Publishers.
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