材料期刊网

Fe-Ga thin films were prepared by DC magnetron sputtering on Si (100) substrate and an alloy target consisting of Fe(81)Ga(19) was used. X-ray diffraction techniques were used to quantify the strain in the Fe-Ga thin films by measuring the interplanar spacings of select crystallographic planes. The interplanar spacing, d, for the family of Fe-Ga {211} planes was measured. Using the well-established sin(2)psi technique, the residual stress of the Fe-Ga thin films was calculated. It has been found that the stress for Fe-Ga thin films quickly increases with increasing the sputtering power. The residual stress of thin films is almost unchanged in the range of 220-440 nm, and then it decreases with increasing the thickness of thin films.