{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"利用标准TFT工艺,开发了集成<span style=\"color:red\">a-Si</span><span style=\"color:red\">行</span><span style=\"color:red\">驱动</span>(ARD)电路技术的5.08 cm(2.0 in)和4.57 cm(1.8 in)移动液晶显示屏.通过整合RGBW PenTile矩阵技术和AFFS技术,可以获得很低功耗;应用球形玻璃纤维和优化的电路能够得到非常窄的暗区.综合运用上述技术,我们就有可能将ARD面板运用于移动液晶显示屏.","authors":[{"authorName":"柳世鍾","id":"7e0db540-1146-404c-b43b-e0f77582224f","originalAuthorName":"柳世鍾"},{"authorName":"金炫辰","id":"2892c101-4bef-44ea-bf52-c0c20cb7403e","originalAuthorName":"金炫辰"},{"authorName":"洪光杓","id":"d2939726-a5b0-48b1-9d46-71f9a79abc2a","originalAuthorName":"洪光杓"},{"authorName":"安星俊","id":"0a68f011-70ab-4070-bb6d-c301eb8e23f1","originalAuthorName":"安星俊"},{"authorName":"金天弘","id":"8b3a4317-979e-45d0-bddf-02c42d01aa45","originalAuthorName":"金天弘"},{"authorName":"田正牧","id":"d939f1ee-6329-41fe-9871-085df4d83505","originalAuthorName":"田正牧"},{"authorName":"李貞烈","id":"cbde64de-d29c-4c67-983a-d2e1158ea3c7","originalAuthorName":"李貞烈"}],"doi":"10.3969/j.issn.1007-2780.2006.05.030","fpage":"557","id":"77abe004-9f99-48d0-b0d9-3781144d93b6","issue":"5","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"c5c32712-78e3-4e71-aea7-b04465ab3035","keyword":"LCD","originalKeyword":"LCD"},{"id":"cb70d2b1-cd24-4f9c-a448-19fd79f1fc6d","keyword":"<span style=\"color:red\">a-Si</span><span style=\"color:red\">行</span><span style=\"color:red\">驱动</span>","originalKeyword":"a-Si行驱动"},{"id":"91beaaa7-8a55-433f-9799-89c546011052","keyword":"<span style=\"color:red\">驱动</span>电路","originalKeyword":"驱动电路"}],"language":"zh","publisherId":"yjyxs200605030","title":"移动液晶显示屏用集成<span style=\"color:red\">a-Si</span><span style=\"color:red\">行</span><span style=\"color:red\">驱动</span>电路技术","volume":"21","year":"2006"},{"abstractinfo":"在模拟与仿真的基础上,根据MOS器件的源漏击穿特性,分析了用于<span style=\"color:red\">a-Si</span> TFT有源<span style=\"color:red\">驱动</span>阵列的外围保护电路的工作原理;同时根据所采用的有源OLED单元像素<span style=\"color:red\">驱动</span>电路的特点,确定了电源线、数据线、信号线上的相应保护电路形式.该保护电路可应用于OLED的有源<span style=\"color:red\">驱动</span>TFT阵列.","authors":[{"authorName":"张彤","id":"547788b2-212e-4010-8e18-5357ee2af149","originalAuthorName":"张彤"},{"authorName":"王丽杰","id":"416d6d6e-c3d7-4322-b642-0bfd100cf557","originalAuthorName":"王丽杰"},{"authorName":"许武","id":"62056c85-73eb-4b92-a959-e8106dddd044","originalAuthorName":"许武"},{"authorName":"郭小军","id":"b95e4921-7654-4050-85f6-9d89c20b6db5","originalAuthorName":"郭小军"},{"authorName":"赵毅","id":"ae937a2f-ad34-4a68-9b67-5182d21e0cb7","originalAuthorName":"赵毅"},{"authorName":"刘式墉","id":"95b650c2-2a67-4341-bd4e-69a8c570c7fc","originalAuthorName":"刘式墉"}],"doi":"10.3969/j.issn.1007-2780.2004.04.010","fpage":"286","id":"48ce628e-5a2e-4839-ab44-ff356d0d60a5","issue":"4","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"476842f3-5163-4091-999e-eee6fba4a486","keyword":"OLED","originalKeyword":"OLED"},{"id":"0e0fcde4-c4ca-4042-865a-97af486d6a6f","keyword":"<span style=\"color:red\">a-Si</span> TFT","originalKeyword":"a-Si TFT"},{"id":"015685ab-6fe7-442c-8d67-939c8efed751","keyword":"有源<span style=\"color:red\">驱动</span>","originalKeyword":"有源驱动"},{"id":"430c1d6c-b58e-4d00-9822-336009d24c4d","keyword":"穿通效应","originalKeyword":"穿通效应"},{"id":"694247a3-54af-42ba-aabe-fde6452811ec","keyword":"布图设计","originalKeyword":"布图设计"},{"id":"3add7f7d-e6a3-4cb9-ad64-4b04ef8d820d","keyword":"仿真模拟","originalKeyword":"仿真模拟"}],"language":"zh","publisherId":"yjyxs200404010","title":"用于OLED的<span style=\"color:red\">a-Si</span> TFT有源<span style=\"color:red\">驱动</span>阵列保护电路的分析","volume":"19","year":"2004"},{"abstractinfo":"对OLED两管<span style=\"color:red\">a-Si</span>: H有源<span style=\"color:red\">驱动</span>技术中存储电容对器件寿命的影响进行了详细的讨论;结合<span style=\"color:red\">驱动</span>管的宽长比,从理论分析和SPICE模拟两个方面研究了存储电容对电路充电率、跳变电压和保持特性的影响,找出其间相互制约的数量关系,最后给出优化设计的参考值.","authors":[{"authorName":"李云飞","id":"39d7342d-7f88-4a26-8be2-7cda0195e0e7","originalAuthorName":"李云飞"},{"authorName":"王永生","id":"bf008c0f-1e99-4e5c-9001-34aeddf7ad4f","originalAuthorName":"王永生"},{"authorName":"张晓龙","id":"c2ae32fb-4e06-4069-a2ce-ad303241db48","originalAuthorName":"张晓龙"},{"authorName":"刘宏宇","id":"ea2a1496-8102-4a19-af0d-12efca917360","originalAuthorName":"刘宏宇"},{"authorName":"王刚","id":"1d9e210f-7112-41ef-b34e-41ab6b317105","originalAuthorName":"王刚"},{"authorName":"邵喜斌","id":"838c16ff-2658-4161-b961-98bc0cb88ebb","originalAuthorName":"邵喜斌"},{"authorName":"何大伟","id":"a81e17ab-1612-470a-a2e1-eebc9008c99b","originalAuthorName":"何大伟"}],"doi":"10.3969/j.issn.1007-2780.2008.05.010","fpage":"572","id":"d9d439ea-7678-470b-9e9e-a32d897acd45","issue":"5","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"e671c9da-5f9b-44ef-b7c9-273042879417","keyword":"OLED","originalKeyword":"OLED"},{"id":"5cce4aee-6453-4d78-af76-30c26d68f740","keyword":"有源<span style=\"color:red\">驱动</span>","originalKeyword":"有源驱动"},{"id":"2e27b692-d267-4d52-bb1f-72549c72e9b0","keyword":"存储电容","originalKeyword":"存储电容"},{"id":"d7c2fdb6-5f8a-420c-bd62-14c4ad3f7601","keyword":"充电率","originalKeyword":"充电率"}],"language":"zh","publisherId":"yjyxs200805010","title":"<span style=\"color:red\">a-Si</span>:H TFT OLED<span style=\"color:red\">驱动</span>电路中存储电容对显示性能的影响","volume":"23","year":"2008"},{"abstractinfo":"分析了<span style=\"color:red\">a-Si</span>:H-TFT阈值电压漂移的机理,即分析了栅偏应力下电荷注入到SiNx:H栅绝缘层和<span style=\"color:red\">a-Si</span>:H中亚稳态的产生对TFT阈值电压漂移的影响.根据非晶硅中亚稳态产生的特点,并针对<span style=\"color:red\">驱动</span>OLED的两管<span style=\"color:red\">a-Si</span>:H-TFT像素电路,提出了一种通过对数据信号时序的重新设计来补偿阈值电压漂移的方法,即在数据信号间加插一个与数据信号极性相反的补偿信号.通过这种正负交替的信号,使<span style=\"color:red\">驱动</span>管TFT中由亚稳态造成的阈值电压漂移始终保持在一个动态平衡的过程,来实现<span style=\"color:red\">驱动</span>OLED电流稳定的目的.","authors":[{"authorName":"刘金娥","id":"cde34bf5-4014-4843-9d4b-20c8e473f6cb","originalAuthorName":"刘金娥"},{"authorName":"廖燕平","id":"7d42e80c-bc46-44e7-8056-bdcc6285c6f4","originalAuthorName":"廖燕平"},{"authorName":"荆海","id":"e1e148a3-2583-48fe-aaf6-52d6c40af21f","originalAuthorName":"荆海"},{"authorName":"张志伟","id":"21100728-2b72-4be3-9e50-faf8178ecc6d","originalAuthorName":"张志伟"},{"authorName":"付国柱","id":"4fd31c7d-f789-44c2-833c-32a170bbde91","originalAuthorName":"付国柱"},{"authorName":"邵喜斌","id":"65586b77-5270-44c3-88fa-507d04170dae","originalAuthorName":"邵喜斌"}],"doi":"10.3969/j.issn.1007-2780.2006.05.018","fpage":"491","id":"aa7b7f1e-103b-4844-86b8-1f4c4b1a55c4","issue":"5","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"8413d8a8-d8c1-4e57-8367-cf15d3dea72b","keyword":"OLED","originalKeyword":"OLED"},{"id":"775a7342-1fcd-49da-b783-6c434df290e4","keyword":"<span style=\"color:red\">a-Si</span>:H-TFT","originalKeyword":"a-Si:H-TFT"},{"id":"c36bef40-622a-4bf2-8a4a-fc7240251aab","keyword":"阈值电压漂移","originalKeyword":"阈值电压漂移"},{"id":"7b771b0a-fc32-4de9-bcb2-8443d6f7bc53","keyword":"电荷注入","originalKeyword":"电荷注入"},{"id":"075f2388-b33e-4a83-81a2-539c161cd526","keyword":"亚稳态","originalKeyword":"亚稳态"},{"id":"bc48a07b-2bf4-4d16-9d48-423ac9d1ca80","keyword":"补偿方法","originalKeyword":"补偿方法"}],"language":"zh","publisherId":"yjyxs200605018","title":"<span style=\"color:red\">a-Si</span>:H-TFT阈值电压漂移机理及其在<span style=\"color:red\">驱动</span>OLED显示中的补偿设计","volume":"21","year":"2006"},{"abstractinfo":"主要介绍了用于有源<span style=\"color:red\">驱动</span>有机发光二极管显示屏的非晶硅薄膜晶体管阵列中各种电子器件参数的设计依据,通过理论计算,确定了单元像素中的各种器件参数;利用Aim-spice进行模拟仿真,对器件的参数进行了优化;利用L-Edit进行布图设计,完成了阵列像素的版图.该设计对小尺寸非晶硅有源<span style=\"color:red\">驱动</span>OLED的研究开发有一定的意义.","authors":[{"authorName":"张彤","id":"dadab4c3-687d-45b4-a851-9f2ffeabf051","originalAuthorName":"张彤"},{"authorName":"郭小军","id":"aa56d631-164e-4b7b-91f2-6fda2e38afae","originalAuthorName":"郭小军"},{"authorName":"赵毅","id":"ed7bb093-11a5-49fc-9193-72b43daaacc0","originalAuthorName":"赵毅"},{"authorName":"李春星","id":"be55e03f-9505-4f0f-82cf-eb0e98065f06","originalAuthorName":"李春星"},{"authorName":"许武","id":"9bcf9016-f674-4a89-8956-5341cb3d1a71","originalAuthorName":"许武"},{"authorName":"王丽杰","id":"a5c2059a-d483-45e4-8267-342aab7751c1","originalAuthorName":"王丽杰"},{"authorName":"刘式墉","id":"4cc94caa-9433-4789-b661-7b0f3ff7b498","originalAuthorName":"刘式墉"}],"doi":"10.3969/j.issn.1007-2780.2003.05.003","fpage":"332","id":"ec7668e8-9136-4246-a5a6-e2b682880635","issue":"5","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"607b30da-ddcb-4eec-8ab5-b8deb19ea36c","keyword":"有机发光二极管","originalKeyword":"有机发光二极管"},{"id":"b4c8ba6f-dbfd-4204-9d6c-e94056eafead","keyword":"薄膜晶体管","originalKeyword":"薄膜晶体管"},{"id":"613f6bf2-4963-4d36-8f2a-a46e1d6395db","keyword":"有源<span style=\"color:red\">驱动</span>","originalKeyword":"有源驱动"},{"id":"f48d0821-60e7-443f-abd8-a5fd5893e7bb","keyword":"布图","originalKeyword":"布图"},{"id":"d204549f-63ee-42cc-a9f2-31ad8c52fecd","keyword":"仿真","originalKeyword":"仿真"}],"language":"zh","publisherId":"yjyxs200305003","title":"<span style=\"color:red\">a-Si</span> TFT OLED有源<span style=\"color:red\">驱动</span>阵列参数的优化与布图设计","volume":"18","year":"2003"},{"abstractinfo":"介绍了<span style=\"color:red\">a-Si</span>:H TFT开关器件的有源层、栅绝缘层、欧姆接触层以及界面特性的研究工作.研制了<span style=\"color:red\">a-Si</span>∶H TFT单管器件,其开关电流比达到6个数量级,为最终研制<span style=\"color:red\">a-Si</span>∶H TFT AMLCD视频图像显示器奠定了坚实的基础.","authors":[{"authorName":"袁剑峰","id":"06508fe8-4a1e-492e-a2d1-56978c477811","originalAuthorName":"袁剑峰"},{"authorName":"杨柏梁","id":"1d332d00-939a-4315-a2d6-98c1a950a474","originalAuthorName":"杨柏梁"},{"authorName":"朱永福","id":"0f6e3a0e-c56a-483a-be14-3a3801a37400","originalAuthorName":"朱永福"},{"authorName":"李牧菊","id":"2042d268-406a-4967-aed6-f90cf8dcea06","originalAuthorName":"李牧菊"},{"authorName":"刘传珍","id":"8e1d449f-ed83-421c-b4e4-9f1ba4a11b5c","originalAuthorName":"刘传珍"},{"authorName":"吴渊","id":"3931f5ee-8576-43f6-aa15-6dc98bb55afc","originalAuthorName":"吴渊"},{"authorName":"廖燕平","id":"11643c1b-37ee-46c4-af79-555e191b14e2","originalAuthorName":"廖燕平"},{"authorName":"王刚","id":"01de9b5a-ffe1-4c7d-8fa5-00528f21edca","originalAuthorName":"王刚"},{"authorName":"邵喜斌","id":"03e81b08-de0b-4005-a64e-1b3088702774","originalAuthorName":"邵喜斌"},{"authorName":"刘宏武","id":"b41f497e-d2d0-46e9-b26c-ebeed13fc5b3","originalAuthorName":"刘宏武"},{"authorName":"黄锡珉","id":"7a77450e-3ff1-4a2d-b638-2fe97a296428","originalAuthorName":"黄锡珉"}],"doi":"10.3969/j.issn.1007-2780.1999.03.005","fpage":"181","id":"98e8a1e3-b819-4db9-bba2-fe57f8f5b5f4","issue":"3","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"399e9865-090f-482e-8707-8f2c53a966fb","keyword":"<span style=\"color:red\">a-Si</span>","originalKeyword":"a-Si"},{"id":"ceb24346-bf07-4412-aa69-cc3c446c8abb","keyword":"HTFT开关器件","originalKeyword":"HTFT开关器件"},{"id":"0d048e3d-d21d-467e-a8e4-20dd72d6383d","keyword":"有源层","originalKeyword":"有源层"},{"id":"5e58f6a5-c81f-4c5b-8381-71bdd76752a8","keyword":"栅绝缘层","originalKeyword":"栅绝缘层"},{"id":"81f4d56e-5877-4351-822d-4dbec9df0fa1","keyword":"界面特性","originalKeyword":"界面特性"}],"language":"zh","publisherId":"yjyxs199903005","title":"高性能<span style=\"color:red\">a-Si</span>:H TFT开关器件的研制","volume":"14","year":"1999"},{"abstractinfo":"采用PECVD工艺,在300℃下在50μm厚的Kapton E高分子塑料片上制备了底栅结构<span style=\"color:red\">a-Si</span>:H TFT阵列(20×20).用傅里叶变换红外光谱仪表征了<span style=\"color:red\">a-Si</span>:H薄膜的结构,用二探针法和四探针法分别表征了<span style=\"color:red\">a-Si</span>:H薄膜和n+a-<span style=\"color:red\">Si</span>:H薄膜的电导率.<span style=\"color:red\">a-Si</span>:H薄膜中的H(原子数分数)约为15.6%,H主要以SiH和SiH2基团的形式存在,其电导率为8.2×10-7～8.8×10-6 S/cm;n+a-<span style=\"color:red\">Si</span>:H薄膜的电导率为3.8×10-3 S/cm.所制备的TF工具有以下性能:Ioff≈1×10-14 A,Ionn≈1×10-9 A,Ion/Ioff≈105,Vth≈5 V,μ≈0.113cm2/(V·s),S≈2.5 V/dec,满足TFT-LCD等平板显示器件的开关寻址电路要求.","authors":[{"authorName":"姚建可","id":"4eb100ae-890f-48a8-b535-6b79de336970","originalAuthorName":"姚建可"},{"authorName":"许宁生","id":"4dbc4b1c-eecc-46ce-8d13-afc44bd97d12","originalAuthorName":"许宁生"},{"authorName":"邓少芝","id":"f6ca8a18-7129-409b-adb5-3c5c4d4ee808","originalAuthorName":"邓少芝"},{"authorName":"陈军","id":"fa0beb21-9a5c-4c22-b01c-326fb3f415f0","originalAuthorName":"陈军"},{"authorName":"佘峻聪","id":"1bfa5507-14e1-47fb-8591-2dedeb468feb","originalAuthorName":"佘峻聪"},{"authorName":"王彬","id":"34e918b7-62f7-41ec-a725-65bbbc883167","originalAuthorName":"王彬"}],"doi":"10.3969/j.issn.1007-2780.2010.04.018","fpage":"542","id":"6f720419-f781-4f16-96cf-4cec609de60a","issue":"4","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"9c33d3e8-faa4-42e1-ab83-c476fa95afd5","keyword":"塑料基底","originalKeyword":"塑料基底"},{"id":"89cc51e4-5eac-4805-8f15-b871e20f9158","keyword":"<span style=\"color:red\">a-Si</span>:H TFT","originalKeyword":"a-Si:H TFT"},{"id":"682fe832-c115-47e1-be26-d19aa3567484","keyword":"柔性显示","originalKeyword":"柔性显示"}],"language":"zh","publisherId":"yjyxs201004018","title":"塑料基底<span style=\"color:red\">a-Si</span>:H TFT制备技术","volume":"25","year":"2010"},{"abstractinfo":"分析了等离子体显示器中行扫描芯片的浪涌电压产生机理.结合浪涌电压产生机理从PDP<span style=\"color:red\">驱动</span>技术的角度提出抑制浪涌电压的理论方案,并以实验室PDP模组为实验载体,通过修改控制板<span style=\"color:red\">驱动</span>代码来实现该方案.通过实测新方案的波形,并观察PDP屏显示的静态图像与动态图像,验证了该方案可以有效抑制<span style=\"color:red\">行</span>扫描芯片的浪涌电压.该方案使得芯片的制造成本降低,从而缩减了整个PDP系统的成本.","authors":[{"authorName":"王勇森","id":"134a6eee-d2df-4368-8d3a-6cdec551534d","originalAuthorName":"王勇森"},{"authorName":"华国环","id":"d0117427-db7e-4381-b48f-b41e33889302","originalAuthorName":"华国环"},{"authorName":"何晓莹","id":"3928d5ad-8545-4c7b-a918-478dd4becc5a","originalAuthorName":"何晓莹"},{"authorName":"孙伟锋","id":"77fdeb45-7eec-4426-bd13-7d653e2b4c16","originalAuthorName":"孙伟锋"}],"doi":"10.3788/YJYXS20122701.0098","fpage":"98","id":"7661580e-8c1f-4154-a8ff-9d3521e86e10","issue":"1","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"e581afce-e56b-489e-b640-04a4c6e3318c","keyword":"PDP","originalKeyword":"PDP"},{"id":"f8b33fa9-7ff9-420e-a317-e9f07bab15ab","keyword":"<span style=\"color:red\">行</span>扫描芯片","originalKeyword":"行扫描芯片"},{"id":"c589276c-a0df-438d-b20d-524c541674cd","keyword":"浪涌电压","originalKeyword":"浪涌电压"},{"id":"746f6c4b-b036-4ba1-9312-a67b54e754b3","keyword":"<span style=\"color:red\">驱动</span>技术","originalKeyword":"驱动技术"}],"language":"zh","publisherId":"yjyxs201201019","title":"基于PDP<span style=\"color:red\">驱动</span>技术的<span style=\"color:red\">行</span>扫描芯片浪涌电压抑制方法","volume":"27","year":"2012"},{"abstractinfo":"本实验于原有的单底栅<span style=\"color:red\">a-Si</span> TFT产品结构下,通过增加不同的顶栅极设计方式(不同<span style=\"color:red\">a-Si</span>覆盖比例、不同沟道几何形貌、不同沟道W/L比例)来研究双栅极设计对<span style=\"color:red\">a-Si</span> TFT特性的影响.实验结果显示双栅极<span style=\"color:red\">a-Si</span> TFT比现行单底栅<span style=\"color:red\">a-Si</span> TFT可以提升Ion7％、降低SS 3％、同时对Ioff以及TFT稳定性影响不明显,显示双栅极<span style=\"color:red\">a-Si</span> TFT设计结构具有在不提高成本以及不变更工艺流程下,达到整体提升TFT特性的效果.顶栅极TFT特性不如底栅极,推测为<span style=\"color:red\">a-Si</span>/PVX界面不佳使得电子导通困难导致,未来可以借由改善<span style=\"color:red\">a-Si</span>/PVX界面工艺提升顶栅极TFT特性.","authors":[{"authorName":"林致远","id":"f7201c36-d636-4452-aa05-b6f122506311","originalAuthorName":"林致远"},{"authorName":"马骏","id":"d6c50acd-f742-4b97-87eb-f8db59d6988c","originalAuthorName":"马骏"},{"authorName":"林亮","id":"bafb542c-e623-403d-9e93-7a70a4b50df0","originalAuthorName":"林亮"},{"authorName":"杨成绍","id":"8b996b2a-a602-4ba7-a004-b340194ff9ab","originalAuthorName":"杨成绍"},{"authorName":"邹志翔","id":"d936b89b-9e48-440a-91c4-9595d38b78c8","originalAuthorName":"邹志翔"},{"authorName":"黄寅虎","id":"5b516cd0-200e-4e08-8f31-1a9cca0615ba","originalAuthorName":"黄寅虎"},{"authorName":"文锺源","id":"dc283040-5a61-42c9-b42c-5bd94bbc140a","originalAuthorName":"文锺源"},{"authorName":"王章涛","id":"492471ce-6fcb-4be4-ada3-48abcce2eee4","originalAuthorName":"王章涛"}],"doi":"10.3788/YJYXS20163105.0460","fpage":"460","id":"da8ce34b-f9f5-41fe-8a2b-d0c7d33b28af","issue":"5","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示   "},"keywords":[{"id":"f05816a1-fcbe-4516-8438-550dafc0edd4","keyword":"高开口率高级超维场转换技术","originalKeyword":"高开口率高级超维场转换技术"},{"id":"dce2bf02-027c-4d54-9198-e551c2e96e2c","keyword":"非晶硅","originalKeyword":"非晶硅"},{"id":"6109da46-76ef-4e19-b41b-dc43628fd418","keyword":"薄膜电晶体","originalKeyword":"薄膜电晶体"},{"id":"7c64e0cd-6eb6-4eb2-98d4-9de4f2f5df09","keyword":"双栅极","originalKeyword":"双栅极"}],"language":"zh","publisherId":"yjyxs201605006","title":"不同双栅极设计对<span style=\"color:red\">a-Si</span>:H TFT特性影响","volume":"31","year":"2016"},{"abstractinfo":"采用射频磁控反应溅射技术制备不同<span style=\"color:red\">Si</span>层厚度的<span style=\"color:red\">a-Si</span>/a-SiNx超晶格材料.利用红外光谱(IR)、能谱(EDS)、X射线衍射谱(XRD)、吸收谱和光致发光(PL)谱对超晶格材料的成分、结构和发光特性进行研究.结果表明,样品的光学吸收边和PL峰随着<span style=\"color:red\">Si</span>层的厚度的变化而发生明显偏移,观察到了明显的量子限制效应.在氮气保护下以1000℃对样品进行热退火处理,发现<span style=\"color:red\">Si</span>层厚的样品退火后发光峰相对于退火前发生了蓝移,这归因于样品中nc-<span style=\"color:red\">Si</span>颗粒的形成.","authors":[{"authorName":"张春华","id":"48136192-0db2-407d-8a88-954ff1b14f33","originalAuthorName":"张春华"},{"authorName":"郭亨群","id":"5995a9ad-e63e-408a-a9fb-a85237c56996","originalAuthorName":"郭亨群"},{"authorName":"王国立","id":"c75e03a4-8e55-4d73-93d8-667ef520ff7b","originalAuthorName":"王国立"},{"authorName":"申继伟","id":"1fad9074-7076-4bbb-856c-981cac3eaaa4","originalAuthorName":"申继伟"},{"authorName":"徐骏","id":"78de34c9-f59d-445a-8955-889825118d91","originalAuthorName":"徐骏"},{"authorName":"陈坤基","id":"f4cc0600-f191-4d69-aa46-fba6260d7595","originalAuthorName":"陈坤基"}],"doi":"10.3969/j.issn.1007-4252.2009.03.002","fpage":"223","id":"efcbc0ff-00c4-481f-8200-6e98e45f1a78","issue":"3","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"2a8a6e7d-a39d-4690-a28b-29cc3fa8ebff","keyword":"<span style=\"color:red\">a-Si</span>/a-SiNx超晶格","originalKeyword":"a-Si/a-SiNx超晶格"},{"id":"04525f3f-ca21-4b59-82bd-44ae2d0d1051","keyword":"光致发光","originalKeyword":"光致发光"},{"id":"24a4375f-61c9-4bb5-8626-ad276528caf0","keyword":"量子限制效应","originalKeyword":"量子限制效应"},{"id":"0c0c7320-0563-4add-86c9-76491b654b27","keyword":"射频磁控反应溅射","originalKeyword":"射频磁控反应溅射"}],"language":"zh","publisherId":"gnclyqjxb200903002","title":"<span style=\"color:red\">a-Si</span>/a-SiNx超晶格材料光学特性","volume":"15","year":"2009"}],"totalpage":1242,"totalrecord":12413}