参考文献：

[1] Roya Maboudian;Carlo Carraro;Debbie G. Senesky;Christopher S. Roper.Advances in silicon carbide science and technology at the micro-and nanoscales[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,20135(5):050805-1-050805-18.
[2] Tuominen M.;Yakimova R.;Glass RC.;Tuomi T.;Janzen E.;Prieur E..DEFECT ANALYSIS IN LELY-GROWN 6H SIC[J].Journal of Crystal Growth,19963(3):233-244.
[3] Troffer T.;Frank T.;Itoh H.;Pensl G.;Heindl J.;Strunk HP. Maier M.;Schadt M..DOPING OF SIC BY IMPLANTATION OF BORON AND ALUMINUM[J].Physica Status Solidi, A. Applied Research,19971(1):277-298.
[4] M. D. Eisaman;J. Fan;A. Migdall;S. V. Polyakov.Invited Review Article: Single-photon sources and detectors[J].Review of Scientific Instruments,20117(7):071101-1-071101-25.
[5] Satoshi Kamiyama;Motoaki Iwaya;Tetsuya Takeuchi;Isamu Akasaki;Mikael Syv(a)j(a)rvi;Rositza Yakimova.Fluorescent SiC and its application to white light-emitting diodes*[J].半导体学报,2011(01):24-26.
[6] Satoshi Kamiyama;Motoaki Iwaya;Tetsuya Takeuchi;Isamu Akasaki;Rositza Yakimova;Mikael Syvaejaervi.White light-emitting diode based on fluorescent SiC[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2012:23-25.
[7] 何海平 .单晶碳化硅薄膜制备及二氧化硅基复合体系的光致发光研究[D].中国科学技术大学,2004.
[8] Reboredo FA;Galli G.Theory of alkyl-terminated silicon quantum dots[J].The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical,20053(3):1072-1078.
[9] Cui L;Li JJ;Sun J;Du XW.High-density SiC nanocrystals with strong photoluminescence via a nitrogen-loss route[J].Semiconductor Science and Technology,20083(3):35015-1-35015-4-0.
[10] Camassel J;Juillaguet S;Zielinski M;Balloud C.Application of LTPL investigation methods to CVD-grown SiC[J].Chemical vapor deposition: CVD,20068/9(8/9):549-556.
[11] Kamiyama S;Maeda T;Nakamura Y;Iwaya M;Amano H;Akasaki I;Kinoshita H;Furusho T;Yoshimoto M;Kimoto T.Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC[J].Journal of Applied Physics,20069(9):93108-1-93108-4-0.
[12] Chaussende D.;Baillet F.;Charpentier L.;Pernot E.;Pons M.;Madar R..Continuous feed physical vapor transport - Toward high purity and long boule growth of SiC[J].Journal of the Electrochemical Society,200310(10):G653-G657.
[13] D. Hofmann;E. Schmitt.Analysis on defect generation during the SiC bulk growth process[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,19990(0):48-53.
[14] F. Schmid;G. Pensl.Comparison of the electrical activation of P~(+) and N~(+) ions co-implanted along with Si~(+) or C~(+) ions into 4H-SiC[J].Applied physics letters,200416(16):3064-3066.
[15] Sun Guo-Sheng;Zeng Yi-Ping;Li Jin-Min;Liu Xing-Fang;Wang Lei;Zhao Wan-Shun;Yang Ting;Wu Hai-Lei;Yan Guo-Guo;Zhao Yong-Mei;Ning Jin.Multi-wafer 3C-SiC heteroepitaxial growth on Si(100)substrates[J].中国物理B（英文版）,2010(8):614-618.
[16] Jonathan E. Spanier;Greg T. Dunne;Larry B. Rowland.Vapor-phase epitaxial growth on porous 6H-SiC analyzed by Raman scattering[J].Applied physics letters,200026(26):3879-3881.
[17] Zhe Li;Jun Zhang;Haiyan He;Juncao Bian;Xiwen Zhang;Gaorong Han.Blue–green luminescence and SERSapplications and materials science study of carbon-rich hydrogenated amorphous silicon carbide films with multiphase structure[J].Physica status solidi, A. Applications and materials science ePSS,201011(11):2543-2548.
[18] Yafei Zhang;Mikka Nishitani-Gamo;Changyong Xiao;Toshihiro Ando.Synthesis of 3C-SiC nanowhiskers and emission of visible photoluminescence[J].Journal of Applied Physics,20029(9):6066-6070.
[19] 于威;崔双魁;路万兵;王春生;傅广生.纳米6H-SiC薄膜的等离子体化学气相沉积及其紫外发光[J].半导体学报,2006(10):1767-1770.
[20] J. Y. Fan;H. X. Li;Q. J. Wang;D. J. Dai;P. K. Chu.UV-blue photoluminescence from close-packed SiC nanocrystal film[J].Applied physics letters,20118(8):081913-1-081913-3.
[21] Li ZJ;Zhang JL;Meng A;Guo JZ.Large-area highly-oriented SiC nanowire arrays: Synthesis, Raman, and photoluminescence properties[J].The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical,200645(45):22382-22386.
[22] J.Q.Hu;Q.Y.Lu;K.B.Tang;B.Deng;Y.T.Qian;W.C.Yu;G.E.Zhou;X.M.Liu;J.X.Wu.Synthesis and Characterization of SiC Nanowires through a Reduction-Carburization Route[J].The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical,200022(22):5251-5254.
[23] Guangcheng Xi;Yiya Peng;Songming Wan;Tanwei Li;Weichao Yu;Yitai Qian.Lithium-Assisted Synthesis and Characterization of Crystalline 3C-SiC Nanobelts[J].The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical,200452(52):20102-20104.
[24] Fabbri, F.;Rossi, F.;Attolini, G.;Salviati, G.;Iannotta, S.;Aversa, L.;Verucchi, R.;Nardi, M.;Fukata, N.;Dierre, B.;Sekiguchi, T..Enhancement of the core near-band-edge emission induced by an amorphous shell in coaxial one-dimensional nanostructure: The case of SiC/SiO_2 core/shell self-organized nanowires[J].Nanotechnology,201034(34):345702-1-345702-7.
[25] J. Botsoa;V. Lysenko;A. Geloen;O. Marty;J. M. Bluet;G. Guillot.Application of 3C-SiC quantum dots for living cell imaging[J].Applied physics letters,200817(17):173902-1-173902-3-0.
[26] Torres-Raya C;Hernandez-Maldonado D;Ramirez-Rico J;Garcia-Ganan C;de Arellano-Lopez AR;Martinez-Fernandez J.Fabrication, chemical etching, and compressive strength of porous biomimetic SiC for medical implants[J].Journal of Materials Research,200812(12):3247-3254.
[27] Jiyang Fan;Hongxia Li;Jing Wang;Min Xiao.Fabrication and photoluminescence of SiC quantum dots stemming from 3C, 6H, and 4H polytypes of bulk SiC[J].Applied physics letters,201213(13):131906-1-131906-5.
[28] Shikuan Yang;Weiping Cai;Haibo Zeng.Ultra-fine β-SiC quantum dots fabricated by laser ablation in reactive liquid at room temperature and their violet emission[J].Journal of Materials Chemistry: An Interdisciplinary Journal dealing with Synthesis, Structures, Properties and Applications of Materials, Particulary Those Associated with Advanced Technology,200938(38):7119-7123.
[29] Massimo Camarda;Andrea Canino;Antonino La Magna;Francesco La Via;G. Feng;T. Kimoto;M. Aoki;H. Kawanowa.Structural and electronic characterization of (2,3_(3)) bar-shaped stacking fault in 4H-SiC epitaxial layers[J].Applied physics letters,20115(5):051915-1-051915-3.
[30] D. Riedel;F. Fuchs;H. Kraus;S. Vath;A. Sperlich;V. Dyakonov;A. A. Soltamova;P.G. Baranov;V. A. Ilyin;G. V. Astakhov.Resonant Addressing and Manipulation of Silicon Vacancy Qubits in Silicon Carbide[J].Physical review letters,201222(22):226402.1-226402.5.
[31] Pavel G. Baranov;Anna P. Bundakova;Alexandra A. Soltamova;Sergei B. Orlinskii;Igor V. Borovykh;Rob Zondervan;Rogier Verberk;Jan Schmidt.Silicon vacancy in SiC as a promising quantum system for single-defect and single-photon spectroscopy[J].Physical review, B. Condensed matter and materials physics,201112(12):125203:1-125203:12.
[32] Wagner M.;Chen WM.;Janzen E.;Sorman E.;Hallin C. Lindstrom JL.;Magnusson B..Electronic structure of the neutral silicon vacancy in 4H and 6H SiC[J].Physical Review.B.Condensed Matter,200024(24):16555-16560.
[33] T. Shiramomo;B. Gao;F. Mercier;S. Nishizawa;S. Nakano;K. Kakimoto.Study of the effect of doped impurities on polytype stability during PVT growth of SiC using 2D nucleation theory[J].Journal of Crystal Growth,2014Jan.1(Jan.1):95-99.
[34] Sung-Sik Chang;Akira Sakai.Luminescence properties of spark-processed SiC[J].Materials Letters,20047/8(7/8):1212-1217.
[35] Botsoa J;Bluet JM;Lysenko V;Marty O;Barbier D;Guillot G.Photoluminescence of 6H-SiC nanostructures fabricated by electrochemical etching[J].Journal of Applied Physics,20078(8):083526-1-083526-5-0.
[36] Ki-Hwan Lee;Seung-Koo Lee;Ki-Seok Jeon.Photoluminescent Properties Of Silicon Carbide And Porous Silicon Carbide After Annealing[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,20098(8):4414-4420.
[37] Yan Wu;Lingfei Ji;Zhenyuan Lin;Yijian Jiang;Tianrui Zhai.Blue photoluminescence enhancement in laser-irradiated 6H-SiC at room temperature[J].Applied physics letters,20144(4):041906-1-041906-4.