㒄
㐴
材料工程, 2017, 45(2): 112-118.
10.11868/j.issn.1001-4381.2015.000700
太阳能级硅中轻质元素(C,N,O)研究进展

谭毅 1, , 秦世强 2, , 石爽 3, , 姜大川 4, , 李鹏廷 5, , 李佳艳 6,

1.大连理工大学材料科学与工程学院 ,辽宁大连116024;大连理工大学辽宁省太阳能光伏系统重点实验室 ,辽宁大连116024;
2.大连理工大学材料科学与工程学院 ,辽宁大连116024;大连理工大学辽宁省太阳能光伏系统重点实验室 ,辽宁大连116024;
3.大连理工大学材料科学与工程学院 ,辽宁大连116024;大连理工大学辽宁省太阳能光伏系统重点实验室 ,辽宁大连116024;
4.大连理工大学材料科学与工程学院 ,辽宁大连116024;大连理工大学辽宁省太阳能光伏系统重点实验室 ,辽宁大连116024;
5.大连理工大学材料科学与工程学院 ,辽宁大连116024;大连理工大学辽宁省太阳能光伏系统重点实验室 ,辽宁大连116024;
6.大连理工大学材料科学与工程学院 ,辽宁大连116024;大连理工大学辽宁省太阳能光伏系统重点实验室 ,辽宁大连116024
C,N,O等轻质元素的存在对太阳能级晶体硅材料的性能有着广泛影响,而硅材料作为太阳能电池的主要原材料,其纯度对电池的电学性能有着决定性作用.本文总结了晶体硅中C,N,O元素的存在形态、分布规律、形成机制及工艺控制等的研究进展,并对未来硅中轻质元素的研究进行了展望,使用各种提纯工艺的优势交叉互补来控制及去除硅中的杂质值得研究及关注,对硅中C,N,O元素的交互作用的深入研究也将会对硅材料质量的提高有着积极作用.
关键词： 轻质元素   太阳能级硅   杂质
引用： 谭毅, 秦世强, 石爽, 姜大川, 李鹏廷, 李佳艳 太阳能级硅中轻质元素(C,N,O)研究进展. 材料工程, 2017, 45(2): 112-118. doi: 10.11868/j.issn.1001-4381.2015.000700
参考文献：
[1] Lotnyk A;Bauer J;Breitenstein O;Blumtritt H.A TEM study of SIC particles and filaments precipitated in multicrystalline Si for solar cells[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,200810(10):1236-1240.
[2] Bauer J;Breitenstein O;Rakotoniaina JP.Electronic activity of SiC precipitates in multicrystalline solar silicon[J].Physica Status Solidi, A. Applied Research,20077(7):2190-2195.
[3] 申少华;胡波;秦先志.直拉硅单晶炉热系统的改造对氧、碳含量的影响[J].湖南科技大学学报（自然科学版）,2009(3):103-107.
[4] 万群;李玉珍;徐宝琨;赵慕愚.多晶硅中碳化物及其来源的研究[J].半导体学报,1984(04):360.
[5] B. Gao;S. Nakano;K. Kakimoto.Influence of reaction between silica crucible and graphite susceptor on impurities of multicrystalline silicon in a unidirectional solidification furnace[J].Journal of Crystal Growth,20111(1):239-245.
[6] M.P. Bellmann;E.A. Meese;L. Arnberg.Impurity segregation in directional solidified multi-crystalline silicon[J].Journal of Crystal Growth,201021(21):3091-3095.
[7] 邓太平;毛文行;尹传强;刘兵发;杜国平;周浪.太阳能多晶硅锭中夹杂的物相与分布特性[J].材料科学与工程学报,2008(3):449-452.
[8] Chen, N;Liu, BF;Qiu, SY;Liu, GH;Du, GP.Study of SiC and Si3N4 inclusions in industrial multicrystalline silicon ingots grown by directional solidification method[J].Materials science in semiconductor processing,20104(4):231-238.
[9] Liu LJ;Nakano S;Kakimoto K.Carbon concentration and particle precipitation during directional solidification of multicrystalline silicon for solar cells[J].Journal of Crystal Growth,20087/9(7/9):2192-2197.
[10] Natasha Dropka;Christiane Frank-Rotsch;Peter Rudolph.Comparison of stirring efficiency of various non-steady magnetic fields during unidirectional solidification of large silicon melts[J].Journal of Crystal Growth,2013Feb.15(Feb.15):64-72.
[11] Ch. Kudla;A.T. Blumenau;F. Buellesfeld;N. Dropka;Ch. Frank-Rotsch;F. Kiessling;O. Klein;P. Lange;W. Miller;U. Rehse;U. Sahr;M. Schellhorn;G. Weidemann;M. Ziem;G. Bethin;R. Fornari;M. Mueller;J. Sprekels;V. Trautmann;P. Rudolph.Crystallization of 640 kg mc-silicon ingots under traveling magnetic field by using a heater-magnet module[J].Journal of Crystal Growth,2013Feb.15(Feb.15):54-58.
[12] F.-M. Kiessling;F. Biellesfeld;N. Dropka;Ch. Frank-Rotsch;M. Muller;P. Rudolph.Characterization of mc-Si directionally solidified in travelling magnetic fields[J].Journal of Crystal Growth,2012:81-86.
[13] 周蔺桐;章爱生;尹传强;刘小平;周浪.硅熔体中碳化硅熔解与硅晶体中碳化硅生长[J].材料科学与工程学报,2011(5):761-765.
[14] 毛文行;邓太平;杜国平;周浪.太阳能多晶硅锭中硬质夹杂及其形成[J].南昌大学学报（理科版）,2008(1):34-37.
[15] Liu LJ;Nakano S;Kakimoto K.Dynamic simulation of temperature and iron distributions in a casting process for crystalline silicon solar cells with a global model[J].Journal of Crystal Growth,20062(2):515-518.
[16] Halvor Dalaker;Merete Tangstad.Time and Temperature Dependence of the Solubility of Carbon in Liquid Silicon Equilibrated with Silicon Carbide and Its Dependence on Boron Levels[J].Materials transactions,20095(5):1152-1156.
[17] Yi Chen;Govindhan Dhanaraj;Michael Dudley.Thermodynamic Studies of Carbon in Liquid Silicon Using the Central Atoms Model[J].Journal of the American Ceramic Society,20069(9):2922-2925.
[18] A. K. Soiland;E. J. Ovrelid;T. A. Engh;O. Lohne;J. K. Tuset;O. Gjerstad.SiC and Si_3N_4 inclusions in multicrystalline silicon ingots[J].Materials science in semiconductor processing,20041/2(1/2):39-43.
[19] 税琼;樊瑞新;杨德仁;阙端麟.硅中氧氮扩散研究进展[J].半导体技术,1999(6):1-6.
[20] 李勇;钟尧;席珍强;杨德仁;阙端麟.太阳电池用掺氮直拉单晶硅中氧沉淀行为的研究[J].材料科学与工程学报,2006(5):676-678.
[21] Qin, Shiqiang;Jiang, Dachuan;Tan, Yi;Li, Pengting;Wang, Peng;Shi, Shuang.Behavior of carbon in electron beam melted mc-silicon[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2015:207-211.
[22] 李东升;杨德仁;朱爱平;黄笑容;王淦;张锦心;李立本;阙端麟.氮杂质对直拉单晶硅中位错的作用[J].半导体学报,2001(11):1401-1405.
[23] 杨德仁;阙端麟;Koji Sunimo.硅单晶中氮-氧复合体的红外吸收研究[J].红外与毫米波学报,1995(6):441-446.
[24] 杨德仁;阙端麟;Koji;Sumino.高温退火硅单晶中氧和氮杂质性质[J].半导体学报,1996(01):71.
[25] 何友琴;马农农;王东雪.硅中氮的二次离子质谱（SIMS）定量分析[J].现代仪器,2011(3):52-53,57.
[26] Takayuki Narushima;Atsushi Yamashita;Chiaki Ouchi;Yasutaka Iguchi.Solubilities and equilibrium distribution coefficients of oxygen and carbon in silicon[J].Materials transactions,20028(8):2120-2124.
[27] Moller HJ.;Funke C.;Lawerenz A.;Riedel S.;Werner M..Oxygen and lattice distortions in multicrystalline silicon[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,20021/4(1/4):403-416.
[28] 方昕;沈文忠.多晶硅中的氧碳行为及其对太阳电池转换效率的影响[J].物理学报,2011(8):789-800.
[29] Moeller H.J.;Werner M.;Yang D.;Long L..Oxygen and carbon precipitation in multicrystalline solar silicon[J].Physica Status Solidi, A. Applied Research,19991(1):175-189.
[30] S. Nakano;B. Gao, K. Kakimoto.Relationship between oxygen impurity distribution in multicrystalline solar cell silicon and the use of top and side heaters during manufacture[J].Journal of Crystal Growth,2013Jul.15(Jul.15):62-66.

相似文献: