A single gate Ⅲ-Ⅴ junctionless tunnel field effect transistor (SG-JLTFET) has been reported which shows excellent dc characteristics at low power supply operation.This device has a thin uniformly n-type doped channel of GaSb i.e.gallium antimonide which is grown epitaxially over silicon substrate.The DC performance parameters such as ION,ION/IOFF,average and point subthreshold slope as well as device parameters for analog applications viz.transconductance gm,transconductance generation efficiency gm/ID,various capacitances and the unity gain frequency fT are studied using a device simulator.Along with examining its endurance to short channel effects,the performances are also compared with a Silicon Dual Gate Junctionless Tunnel FET (DG-JLTFET).The DC and small signal analog performance reflects that GaSb SG-JLTFET has immense purview for extreme high-frequency and low-power applications.