The temperature coefficient of resistance (abbreviated as TCR) of thin film resistors on some sensor chips,such as thermal converters,should be less than several ppm/℃.However,the TCR of reported thin films is larger than 5 ppm/℃.In this paper,Ni24.9Cr72.5Si2.6 films are deposited on silicon dioxide film by DC and RF magnetron sputtering.Then as-deposited films are annealed at 450 ℃ under different durations in N2 atmosphere.The sheet resistance of thin films with various thickness and annealing time are measured by the four probe re-sistivity test system at temperature of 20,50,100,150,and 200 ℃ and then the TCR of thin films are calculated.Experimental results show that the film with the TCR of only-0.86 ppm/℃ can be achieved by RF magnetron sputtering and appropriate annealing conditions.