Graphene field-effect transistors have been intensively studied.However,in order to fabricate devices with more complicated structures,such as the integration with waveguide and other two-dimensional materials,we need to transfer the exfoliated graphene samples to a target position.Due to the small area of exfoliated graphene and its random distribution,the transfer method requires rather high precision.In this paper,we systematically study a method to selectively transfer mechanically exfoliated graphene samples to a target position with a precision of sub-micrometer.To characterize the doping level of this method,we transfer graphene flakes to pre-patterned metal electrodes,forming graphene field-effect transistors,The hole doping of graphene is calculated to be 2.16 × 1012 cm-2.In addition,we fabricate a waveguide-integrated multi layer graphene photodetector to demonstrate the viability and accuracy of this method.A photocurrent as high as 0.4 μA is obtained,corresponding to a photoresponsivity of 0.48 mA/W.The device performs uniformly in nine illumination cycles.