The major purpose of this paper is to find an alternative configuration that not only minimizes the limitations of single-gate (SG) MOSFETs but also provides the better replacement for future technology.In this paper,the electrical characteristics of SiGe double-gate N-MOSFET are demonstrated and compared with electrical characteristics of Si double-gate N-MOSFET.Furthermore,in this paper the electrical characteristics of Si doublegate N-MOSFET are demonstrated and compared with electrical characteristics of Si single-gate N-MOSFET.The simulations are carried out for the device at different operational voltages using Cogenda Visual TCAD tool.Moreover,we have designed its structure and studied both Id-Vg characteristics for different voltages namely 0.05,0.1,0.5,0.8,1 and 1.5 V and Id-Vd characteristics for different voltages namely 0.1,0.5,1 and 1.5 V at work functions 4.5,4.6 and 4.8 eV for this structure.The performance parameters investigated in this paper are threshold voltage,DIBL,subthreshold slope,GIDL,volume inversion and MMCR.