The properties of defect-induced ferromagnetism (d0 magnetism) in SiC belong to carbon-based material which has been systematically investigated after graphite.In this paper,we reviewed our research progress about d0 magnetism in two aspects,i.e.,magnetic source and magnetic coupling mechanism.The VsiVC divacancies have been evidenced as the probable source of d0 magnetism in SiC.To trace the ferromagnetic source in microscopic and electronic view,the p electrons of the nearest-neighbor carbon atoms,which are around the VsiVC divacancies,are sourced.For magnetic coupling mechanism,a higher divacancy concentration leads to stronger paramagnetic interaction but not stronger ferromagnetic coupling.So the d0 magnetism can probably be explained as a local effect which is incapable of scaling up with the volume.