{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"Surface <span style=\"color:red\">metallization</span> of <span style=\"color:red\">alumina</span> <span style=\"color:red\">ceramics</span> was carried out by <span style=\"color:red\">pulsed</span> high energy density <span style=\"color:red\">plasma</span> (PHEDP). A layer of <span style=\"color:red\">copper</span> <span style=\"color:red\">film</span> was deposited on the surface of <span style=\"color:red\">alumina</span> <span style=\"color:red\">ceramics</span>. Scanning auger electron microscopy (SAM) analysis revealed that <span style=\"color:red\">copper</span> diffused deep into the <span style=\"color:red\">alumina</span> substrate. Bonding of <span style=\"color:red\">alumina</span> and <span style=\"color:red\">copper</span> <span style=\"color:red\">film</span> was good. The reaction between <span style=\"color:red\">copper</span> and <span style=\"color:red\">alumina</span> was studied by X-ray diffraction (XRD) analysis. A <span style=\"color:red\">copper</span> aluminum oxide unstable at high temperature and very difficult to be synthesized, cubic phase <span style=\"color:red\">CuAl2O4</span>, was detected. A kinetics complexity in reaction of PHEDP and <span style=\"color:red\">ceramics</span> was discussed. An adiabatic model was used to describe heating and quenching of the PHEDP processing and analyze the interaction between PHEDP and <span style=\"color:red\">alumina</span> <span style=\"color:red\">ceramics</span>. The experimental results suggest that PHEDP method is a useful technology for various <span style=\"color:red\">metal-ceramics</span> bonding. (C) 2002 Elsevier Science B.V. All rights reserved.","authors":[],"categoryName":"|","doi":"","fpage":"104","id":"0662e0b7-449a-4b7d-9eed-a25acc243297","issue":"42739","journal":{"abbrevTitle":"ASS","id":"37ae36ec-c0a6-4a63-a0e4-17e6084ce74f","issnPpub":"0169-4332","publisherId":"ASS","title":"Applied Surface Science"},"keywords":[{"id":"8f9ff81e-08d9-4ba4-9929-d27efdd75678","keyword":"<span style=\"color:red\">metallization</span>;<span style=\"color:red\">pulsed</span> <span style=\"color:red\">plasma</span>;<span style=\"color:red\">CuAl2O4</span>;<span style=\"color:red\">copper</span> <span style=\"color:red\">film</span>;<span style=\"color:red\">alumina</span> <span style=\"color:red\">ceramics</span>;<span style=\"color:red\">copper</span> <span style=\"color:red\">deposition</span>;<span style=\"color:red\">metal</span>","originalKeyword":"metallization;pulsed plasma;CuAl2O4;copper film;alumina ceramics;copper deposition;metal"}],"language":"en","publisherId":"0169-4332_2002_42739_1","title":"Surface <span style=\"color:red\">metallization</span> of <span style=\"color:red\">alumina</span> <span style=\"color:red\">ceramics</span> by <span style=\"color:red\">pulsed</span> high energy density <span style=\"color:red\">plasma</span> process","volume":"200","year":"2002"},{"abstractinfo":"采用柠檬酸法制备了尖晶石型纳米晶CuA12<span style=\"color:red\">O4</span>,将其添加到P25(degussa,TiO<span style=\"color:red\">2</span>)中,制备成<span style=\"color:red\">CuAl2O4</span>/TiO<span style=\"color:red\">2</span>薄膜光阳极,并组装成染料敏化太阳电池(DSSC),对其光电性能进行表征.结果表明:<span style=\"color:red\">CuAl2O4</span>的加入,电池性能得到提高；当<span style=\"color:red\">CuAl2O4</span>含量为<span style=\"color:red\">2</span>％(质量分数)时,与纯TiO<span style=\"color:red\">2</span>薄膜光阳极相比,光电转化效率提高了39.1％.","authors":[{"authorName":"胡志强","id":"69908c9f-5017-47d9-b63e-60f5efe24520","originalAuthorName":"胡志强"},{"authorName":"刘显卿","id":"671e0ab0-cc0c-4145-8aba-880aa43a7548","originalAuthorName":"刘显卿"},{"authorName":"黄德锋","id":"98e61dae-64e2-47e4-aada-d8eb2e840c2e","originalAuthorName":"黄德锋"},{"authorName":"高宏","id":"a74f3295-a302-4847-9a0d-95611817c6df","originalAuthorName":"高宏"}],"doi":"10.3969/j.issn.1001-4381.2012.02.015","fpage":"63","id":"e33ccc08-1a5e-4130-82f6-c6cd634d0ec2","issue":"2","journal":{"abbrevTitle":"CLGC","coverImgSrc":"journal/img/cover/CLGC.jpg","id":"9","issnPpub":"1001-4381","publisherId":"CLGC","title":"材料工程"},"keywords":[{"id":"1cc0bd9b-037b-4a80-bb88-1bec19784a23","keyword":"<span style=\"color:red\">CuAl2O4</span>","originalKeyword":"CuAl2O4"},{"id":"673ac378-10a5-49fa-ba4d-c0571feb5c08","keyword":"光阳极","originalKeyword":"光阳极"},{"id":"a3b72261-59c4-4d78-bacd-233bcd102143","keyword":"DSSC","originalKeyword":"DSSC"}],"language":"zh","publisherId":"clgc201202015","title":"染料敏化太阳电池<span style=\"color:red\">CuAl2O4</span>/TiO<span style=\"color:red\">2</span>光阳极制备及性能","volume":"","year":"2012"},{"abstractinfo":"研究了尖晶石型<span style=\"color:red\">CuAl2O4</span>掺杂对CaCu3Ti<span style=\"color:red\">4O</span>12陶瓷显微结构、介电性能以及松弛特征和缺陷结构的影响。在频率为10-1~107 Hz、温度为153~453 K的条件下测量了样品的介电性能。研究表明,适量添加<span style=\"color:red\">CuAl2O4</span>,使样品晶粒尺寸减小并趋于均匀,击穿场强从CaCu3Ti<span style=\"color:red\">4O</span>12陶瓷样品的3.0 kV/cm提高到13.0 kV/cm,低频介电损耗减小。介电松弛中的高频松弛过程起源于晶粒本征缺陷的电子松弛过程,其活化能~0.10 eV基本不变；随着<span style=\"color:red\">CuAl2O4</span>含量增加,与界面相关的松弛活化能从0.50 eV减小到0.22 eV,可能与<span style=\"color:red\">CuAl2O4</span>在样品中引入杂质及更复杂的界面有关；电导活化能从0.66 eV增至0.86 eV,归因于<span style=\"color:red\">CuAl2O4</span>第二相抑制了晶界处的载流子跳跃,提高了Schottky势垒高度。<span style=\"color:red\">CuAl2O4</span>掺杂量大于100mol%,过量<span style=\"color:red\">CuAl2O4</span>会导致样品晶界势垒崩塌,样品失去非欧姆特性和巨介电性能。","authors":[{"authorName":"李建英","id":"c96e8404-020e-4ced-98fb-5026618b5650","originalAuthorName":"李建英"},{"authorName":"侯林林","id":"ca416778-5585-4b00-b259-a76ca7a7e021","originalAuthorName":"侯林林"},{"authorName":"贾然","id":"7d1e7eb2-2877-4639-ba36-a58495d6d5a7","originalAuthorName":"贾然"},{"authorName":"高璐","id":"fad4a697-60ef-4c7e-95f0-08329fd4a7f1","originalAuthorName":"高璐"},{"authorName":"武康宁","id":"cdf570c5-16b8-43a2-b146-449c739e02da","originalAuthorName":"武康宁"},{"authorName":"李盛涛","id":"7fed466d-ed11-458f-9d6c-68057c63b0ff","originalAuthorName":"李盛涛"}],"doi":"10.15541/jim20150118","fpage":"1056","id":"a0c63dc9-0e99-4c86-9afc-a13b217dc6f9","issue":"10","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"5ab70ae1-c7c9-4058-9d8e-74719df1af27","keyword":"CaCu3Ti<span style=\"color:red\">4O</span>12","originalKeyword":"CaCu3Ti4O12"},{"id":"69e08571-7f26-408d-90bd-6198f5182c47","keyword":"介电性能","originalKeyword":"介电性能"},{"id":"ccd2a8e5-d8df-4e81-95ca-98a713fd64a9","keyword":"压敏特性","originalKeyword":"压敏特性"}],"language":"zh","publisherId":"wjclxb201510009","title":"尖晶石型<span style=\"color:red\">CuAl2O4</span>掺杂对CaCu3Ti<span style=\"color:red\">4O</span>12陶瓷介电性能的影响","volume":"","year":"2015"},{"abstractinfo":"采用共沉淀法制备了纳米结构的<span style=\"color:red\">CuAl2O4</span>/CuO,用草酸作牺牲剂,在150W的氙灯照射下,考查了不同焙烧温度、催化剂用量对光催化活性的影响。并用XRD、SEM、TG-DTA对样品分别进行了分析与表征,表明<span style=\"color:red\">CuAl2O4</span>为尖晶石型结构,平均粒径10nm左右。在相同条件下分别考察了固相法、共沉淀法与柠檬酸溶胶-凝胶法对催化剂活性的影响,实验结果表明溶胶-凝胶法产氢活性最好,产氢速率为41mL/h;共沉淀法次之,为34mL/h;固相法最差,为25mL/h。","authors":[{"authorName":"余艳平","id":"3f6b88c9-25d3-438e-a1cc-b362d63773dc","originalAuthorName":"余艳平"},{"authorName":"刘跃进","id":"045c3a91-2171-4026-97a4-3349f885a316","originalAuthorName":"刘跃进"},{"authorName":"张丽","id":"37032aeb-ab1f-497b-86d9-90beb6ee5175","originalAuthorName":"张丽"},{"authorName":"周民杰","id":"a3c9b2bb-3cbc-4dee-be37-dd8fe722d864","originalAuthorName":"周民杰"},{"authorName":"阎建辉","id":"76a763b6-055b-479c-b781-73dc2336120e","originalAuthorName":"阎建辉"}],"doi":"","fpage":"516","id":"1ee5a672-4a32-4bc7-b9aa-a07d33e5bfec","issue":"4","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"7e251b22-e6df-4d32-b2df-2dd4010bfb83","keyword":"偏铝酸铜","originalKeyword":"偏铝酸铜"},{"id":"508c994e-1e80-4586-8359-150ed6681c05","keyword":"共沉淀法","originalKeyword":"共沉淀法"},{"id":"207d226a-6a0e-4e8b-90d6-36c9f652e8bd","keyword":"光催化","originalKeyword":"光催化"},{"id":"61ddabde-858a-43ce-8dd2-452a6f0c1634","keyword":"产氢","originalKeyword":"产氢"},{"id":"f3e3bc9c-0bdf-419f-ab3a-dcd76a699f91","keyword":"模拟太阳光","originalKeyword":"模拟太阳光"}],"language":"zh","publisherId":"gncl201204029","title":"纳米<span style=\"color:red\">CuAl2O4</span>/CuO的制备及其模拟太阳光催化产氢","volume":"43","year":"2012"},{"abstractinfo":"以葡萄糖为模板,硝酸锌、硝酸铜和硝酸铝为原料,采用水热法制备高比表面Zn-CuO/<span style=\"color:red\">CuAl2O4</span>复合空心球.采用XRD、SEM、HRTEM、BET、DRS和PL等手段对样品进行表征,结果表明:在600℃下焙烧的Zn-CuO/<span style=\"color:red\">CuAl2O4</span>复合物呈空心球状,球体直径约为<span style=\"color:red\">2</span> μm,比表面积高达214.97 m<span style=\"color:red\">2</span>/g.引入Zn有助于提高样品对紫外和可见光的吸收能力,减少光生电子空穴对的复合,光催化活性显著提高.在模拟太阳光照下,以甲基橙溶液为目标降解物,考察样品的煅烧温度和Zn加入量对光催化活性的影响.当Zn加入量为0.5wt％,煅烧温度为600℃时,样品的光催化活性最佳.光照60 min,0.5 g/L光催化剂用量对25 mg/L甲基橙溶液的脱色率高达97％.","authors":[{"authorName":"李小艳","id":"8fa2825e-e118-4f27-94ed-28c82a906b28","originalAuthorName":"李小艳"},{"authorName":"阎建辉","id":"a06cf63a-fca3-4085-b16b-598498e14223","originalAuthorName":"阎建辉"},{"authorName":"张丽","id":"5f198c5d-7791-4b5d-bbb0-0ed7cd41bb72","originalAuthorName":"张丽"},{"authorName":"周民杰","id":"650dd99d-487a-4036-8849-0236fbe31508","originalAuthorName":"周民杰"},{"authorName":"刘又年","id":"cac689fb-a94c-4c1c-a7dd-a132ab6049d0","originalAuthorName":"刘又年"}],"doi":"10.15541/jim20140008","fpage":"1055","id":"dd85051e-e18c-45fa-a910-ed160e2a61d2","issue":"10","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"06fd3801-2501-4e7c-a270-a341684017ee","keyword":"Zn-CuO/<span style=\"color:red\">CuAl2O4</span>","originalKeyword":"Zn-CuO/CuAl2O4"},{"id":"f6c293d9-048d-4ad1-9803-42f6b17db048","keyword":"空心球","originalKeyword":"空心球"},{"id":"465fddb5-3175-4b8e-9009-b78641504423","keyword":"水热法","originalKeyword":"水热法"},{"id":"253fde04-d206-4d15-af0e-f3ead7e1ffa0","keyword":"光催化","originalKeyword":"光催化"},{"id":"c7536bcf-5973-455f-b02a-ef49726b4bb9","keyword":"降解","originalKeyword":"降解"}],"language":"zh","publisherId":"wjclxb201410009","title":"Zn掺杂CuO/<span style=\"color:red\">CuAl2O4</span>复合空心球的制备及光催化性能","volume":"29","year":"2014"},{"abstractinfo":"<span style=\"color:red\">Pulsed</span> high-energy-density plasmas were used to process the surfaces of <span style=\"color:red\">alumina</span> <span style=\"color:red\">ceramics</span>. The morphology and composition of different parts of the surfaces of the as-processed samples were examined by scanning electron microscopy and energy dispersive X-ray spectroscopy, respectively. The distinct morphology of the surfaces of the as-processed samples, particularly smooth areas and pits, was observed and studied. Uniform sub-micrometer particles about 250 nm in diameter were observed in the pits and proved to contain <span style=\"color:red\">copper</span>. No elemental <span style=\"color:red\">copper</span> was detected in the smooth areas. The analysis results showed that the plasmas were dusty. X-ray photoelectron spectroscopy was employed to examine the valence of the <span style=\"color:red\">copper</span>. An adiabatic model was used to explain the observed phenomena. A possible method for rapid finishing of advanced <span style=\"color:red\">ceramics</span> was proposed.","authors":[],"categoryName":"|","doi":"","fpage":"375","id":"675d3ce5-5fcf-46a9-a510-964cc4c4b6eb","issue":"2","journal":{"abbrevTitle":"PSSAR","id":"5722fcba-10b3-47a1-bdd3-0cf4accdb887","issnPpub":"0031-8965","publisherId":"PSSAR","title":"Physica Status Solidi a-Applied Research"},"keywords":[{"id":"78f73bab-4ca5-411a-9227-5e1306c492b8","keyword":"kinetic-theory;crystals;waves","originalKeyword":"kinetic-theory;crystals;waves"}],"language":"en","publisherId":"0031-8965_2003_2_3","title":"Interaction between <span style=\"color:red\">pulsed</span> high-energy-density dusty <span style=\"color:red\">plasma</span> and <span style=\"color:red\">alumina</span> <span style=\"color:red\">ceramics</span>","volume":"195","year":"2003"},{"abstractinfo":"<span style=\"color:red\">Copper</span> nitride thin <span style=\"color:red\">film</span> was deposited on glass substrates by reactive DC (direct current) magnetron sputtering at a 0.5 Pa N<span style=\"color:red\">2</span> partial pressure and different substrate temperatures. The as-prepared <span style=\"color:red\">film</span>, characterized with X-Ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy measurements, showed a composed structure of Cu3N crystallites with anti-ReO3 structure and a slight oxidation of the resulted <span style=\"color:red\">film</span>. The crystal structure and growth rate of Cu3N films were affected strongly by substrate temperature. The preferred crystalline orientation of Cu3N films were (111) and (200) at RT, 100℃. These peaks decayed at 200℃ and 300℃ only Cu (111) peak was noticed. Growth of Cu3N films at 100℃ is the optimum substrate temperature for producing high-quality (111) Cu3N films. The <span style=\"color:red\">deposition</span> rate of Cu3N films estimated to be in range of 18–30 nm/min increased while the resistivity and the microhardness of Cu3N films decreased when the temperature of glass substrate increased.","authors":[{"authorName":"Xing′ao LI","id":"cfec1baa-f585-4736-ae6b-dd1066b73c3a","originalAuthorName":"Xing′ao LI"},{"authorName":" Zuli LIU","id":"a12ca6cd-5740-452d-9839-0d15e19b6e35","originalAuthorName":" Zuli LIU"},{"authorName":" Kailun YAO","id":"c9ebd0a7-2175-4c05-9de4-234ed9099a68","originalAuthorName":" Kailun YAO"}],"categoryName":"|","doi":"","fpage":"468","id":"9104c4dc-df94-4474-88b2-42188d28c936","issue":"4","journal":{"abbrevTitle":"CLKXJSY","coverImgSrc":"journal/img/cover/JMST.jpg","id":"11","issnPpub":"1005-0302 ","publisherId":"CLKXJSY","title":"材料科学技术（英文）"},"keywords":[{"id":"e77c1734-7142-4d78-a3db-8411f5c5c7c2","keyword":"DC magnetron sputtering","originalKeyword":"DC magnetron sputtering"},{"id":"f67502a3-5ed7-40ed-83bb-1e87c0ed0942","keyword":"氮化铜薄膜","originalKeyword":"氮化铜薄膜"},{"id":"f61fddf2-3ee6-47b9-bd70-1fc37d297bb3","keyword":"电阻率","originalKeyword":"电阻率"},{"id":"5d444c80-a49f-4c0b-b5f2-b7f44f397172","keyword":"显微硬度","originalKeyword":"显微硬度"}],"language":"en","publisherId":"1005-0302_2007_4_17","title":"Reactive DC Magnetron Sputtering <span style=\"color:red\">Deposition</span> of <span style=\"color:red\">Copper</span> Nitride Thin <span style=\"color:red\">Film</span>","volume":"23","year":"2007"},{"abstractinfo":"In the last years a variety of <span style=\"color:red\">plasma</span> sources have been developed for <span style=\"color:red\">film</span> depositionby <span style=\"color:red\">plasma</span> activated <span style=\"color:red\">deposition</span> techniques. In addition to RF- and DC-sources, pulsedplasma sources are gaining increased attention. This interest is driven by the wish ofdepositing coatings with superior properties as compared to those deposited by conven-tional techniques. One prominent example of coatings that are significantly enhancedby the usage of <span style=\"color:red\">pulsed</span> plasmas is <span style=\"color:red\">alumina</span>. Although crystalline α-<span style=\"color:red\">alumina</span> can be de-posited by thermal CVD at temperatures above 1000℃ for two decades, no process forthe <span style=\"color:red\">deposition</span> of crystalline <span style=\"color:red\">alumina</span> on heat sensitive substrates like tempered steelsat low temperatures is commercially available up to now. In this paper, the depositionof <span style=\"color:red\">alumina</span> films from gaseous mixtures of AlCls-N<span style=\"color:red\">2-H2</span>-Ar in a bipolar <span style=\"color:red\">pulsed</span> glowdischarge at about 500℃ is reported. Special attention was paid on the correlation be-tween <span style=\"color:red\">plasma</span> characteristics and <span style=\"color:red\">film</span> properties. The measurements revealed that theproperties of the resulting coatings were significantly influenced by the characteristicsof the power supply. Depending on the gas composition and the <span style=\"color:red\">plasma</span> parameters,<span style=\"color:red\">alumina</span> films with high hardness and good adhesion were deposited.","authors":[{"authorName":"<span style=\"color:red\">O</span>.Kyrylov","id":"6e06d95f-6277-4dc3-93cf-850d1af089dc","originalAuthorName":"O.Kyrylov"},{"authorName":" R.Cremer","id":"06166a8a-eb83-4e89-8acc-9cfe09244e32","originalAuthorName":" R.Cremer"},{"authorName":" D.Neuschütz","id":"eb32a799-f9f6-4e86-a149-fd194e4f7b75","originalAuthorName":" D.Neuschütz"}],"categoryName":"|","doi":"","fpage":"1","id":"aed91727-50df-4115-afdc-2a470fa073ac","issue":"1","journal":{"abbrevTitle":"JSXBYWB","coverImgSrc":"journal/img/cover/amse.jpg","id":"49","issnPpub":"1006-7191","publisherId":"JSXBYWB","title":"金属学报(英文版)"},"keywords":[{"id":"c7dd3e08-ae21-49a4-abf2-5cd3f1cb0e3f","keyword":"<span style=\"color:red\">alumina</span>","originalKeyword":"alumina"},{"id":"920f4f55-37ef-4c77-a1dc-f7247fb7275e","keyword":"null","originalKeyword":"null"},{"id":"a22cce7e-88d2-4886-bb1f-be871261f7d9","keyword":"null","originalKeyword":"null"},{"id":"7a825134-a8f5-4f23-89e5-9791e5183bb8","keyword":"null","originalKeyword":"null"}],"language":"en","publisherId":"1006-7191_2002_1_24","title":"BIPOLAR <span style=\"color:red\">PULSED</span> PECVD OF <span style=\"color:red\">ALUMINA</span> HARD COATINGS","volume":"15","year":"2002"},{"abstractinfo":"The phenomenon of the precursor <span style=\"color:red\">film</span> in a <span style=\"color:red\">metal-ceramics</span> wetting system was investigated using tin-based active solder (active element: Ti, Zr, Nb, V, Hf or Ta, the third element Ni, Cu, Ag, In or Al) wetting on the <span style=\"color:red\">ceramics</span> (sialon, mullite, barium titanate <span style=\"color:red\">alumina</span> and ZTA-SiC). The results show that the formation of a precursor <span style=\"color:red\">film</span> in the wetting system is dependent on the following factors. (1) The active <span style=\"color:red\">metal</span>: the presence of titanium, zirconium or hafnium in the solders induced the formation of a precursor <span style=\"color:red\">film</span>, but niobium, vanadium and tantalum did not. (<span style=\"color:red\">2</span>) Temperature: a precursor <span style=\"color:red\">film</span> will not form unless the critical wetting temperature is reached, while a weak <span style=\"color:red\">film</span> will form during a second wetting at higher temperature. (3) <span style=\"color:red\">Ceramics</span>: under the same wetting conditions for Sn-<span style=\"color:red\">4</span>Ti solder, a precursor <span style=\"color:red\">film</span> forms on the surface of sialon, ZTA-SiC, and red <span style=\"color:red\">alumina</span>, but not on white <span style=\"color:red\">alumina</span>, mullite or barium titanate. (<span style=\"color:red\">4</span>) The third element; small amounts of nickel (1-3 at %), <span style=\"color:red\">copper</span> (5 at %), or silver (5 at %) in Sn-5 at % Ti solder will enhance the precursor <span style=\"color:red\">film</span>. On the other hand, small amounts of Al (5 at %) will completely inhibit the occurrence of precursor <span style=\"color:red\">film</span>. SEM observation reveals the precursor <span style=\"color:red\">film</span> to be mainly composed of a continuous <span style=\"color:red\">film</span> with segregated active <span style=\"color:red\">metal</span> and some small tin islands on the <span style=\"color:red\">film</span>. Its thickness is several micrometres, similar to that of the interfacial reaction layer between the solder and the ceramic. Two early theories for the formation of a precursor <span style=\"color:red\">film</span>, surface diffusion and evaporation-condensation, cannot explain the above phenomenon very well. A new model of rapid absorption then <span style=\"color:red\">film</span> overflow is proposed here for the first time and some problems with the model are also discussed.","authors":[],"categoryName":"|","doi":"","fpage":"1019","id":"aa2df350-957d-497d-9fb1-ba2419e29ea5","issue":"4","journal":{"abbrevTitle":"JOMS","id":"d451b714-34b6-45ff-beb7-4cb8e1a8bb9d","issnPpub":"0022-2461","publisherId":"JOMS","title":"Journal of Materials Science"},"keywords":[{"id":"c7bf9dfc-ce6b-40a4-9ed4-e5e4f6bcd60c","keyword":"brazing filler <span style=\"color:red\">metal</span>;joints;solids","originalKeyword":"brazing filler metal;joints;solids"}],"language":"en","publisherId":"0022-2461_1993_4_1","title":"PRECURSOR <span style=\"color:red\">FILM</span> OF TIN-BASED ACTIVE SOLDER WETTING ON <span style=\"color:red\">CERAMICS</span>","volume":"28","year":"1993"},{"abstractinfo":"High purity <span style=\"color:red\">alumina</span> <span style=\"color:red\">ceramics</span> (99% Al<span style=\"color:red\">2O</span>3) was implanted by <span style=\"color:red\">copper</span> ion and titanium ion in a <span style=\"color:red\">metal</span> vapour vacuum arc (MEVVA) implanter, respectively. The influence of implantation parameters was studied varying ion fluence. The samples were implanted by 68 keV Cu ion and 82 keV Ti ion with fluences from 1 X 10(15) to 1 x 10(18) ions/cm(<span style=\"color:red\">2</span>), respectively. The as-implanted samples were investigated by scanning electron microscopy (SEM), glancing X-ray diffraction (GXRD), scanning Auger microscopy (SAM), and four-probe method. Different morphologies were observed on the surfaces of the as-implanted samples and clearly related to implantation parameters. For both ion implantations, the sheet resistances of the <span style=\"color:red\">alumina</span> samples implanted with Cu and Ti ion fluences of 1 x 10(18) ions/cm(<span style=\"color:red\">2</span>), respectively, reached the corresponding minimum values because of the surface <span style=\"color:red\">metallization</span>. The experimental results indicate that the high-fluence ion implantation resulted in conductive layer on the surface of the as-implanted high purity <span style=\"color:red\">alumina</span> <span style=\"color:red\">ceramics</span>. (c) 2005 Elsevier B.V. All rights reserved.","authors":[],"categoryName":"|","doi":"","fpage":"1029","id":"c472a74e-e039-42f7-976d-db25f6a6ac33","issue":"4","journal":{"abbrevTitle":"ASS","id":"37ae36ec-c0a6-4a63-a0e4-17e6084ce74f","issnPpub":"0169-4332","publisherId":"ASS","title":"Applied Surface Science"},"keywords":[{"id":"75623cc8-82eb-4ab1-aeb0-1677bf194a83","keyword":"99% Al<span style=\"color:red\">2O</span>3;ion implantation;<span style=\"color:red\">copper</span> and titanium ions;sheet resistance;nitride films;behavior;crystals","originalKeyword":"99% Al2O3;ion implantation;copper and titanium ions;sheet resistance;nitride films;behavior;crystals"}],"language":"en","publisherId":"0169-4332_2005_4_1","title":"Change of sheet resistance of high purity <span style=\"color:red\">alumina</span> <span style=\"color:red\">ceramics</span> implanted by Cu and Ti ions","volume":"252","year":"2005"}],"totalpage":9816,"totalrecord":98154}