{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"采用提拉法生长出了掺钕钨酸铋钠(分子式Nd:NaBi(WO4)2,简称Nd:NBW)和掺钕钨酸钇钠(分子式Nd:NaY(WO4)2,简称Nd:NYW)晶体.通过TG-DTA分析得到Nd:NBW的熔点为936.2℃,Nd:NYW的熔点为1209.07℃.由吸收光谱可以看出,Nd:NBW在802 nm有较强的吸收峰,Nd:NYW在804 nm,752 nm,586 nm附近有较强、较宽的吸收峰,二者均适合于LD泵浦;并计算了晶体中Nd3+的吸收截面积.通过比较Nd:NBW和Nd:NYW的红外光谱和拉曼光谱结果,认为二者结构基本相同,为四方晶系、白钨矿结构、141/a空间群.","authors":[{"authorName":"朱忠丽","id":"f14422bf-0f90-49f3-abd3-09395b952303","originalAuthorName":"朱忠丽"},{"authorName":"林海","id":"91b5a56b-c3cb-4698-9884-bd0ef5a9dad1","originalAuthorName":"林海"},{"authorName":"孙域","id":"54919b6f-a7ac-4024-8294-ffd1ac4daf06","originalAuthorName":"孙域"},{"authorName":"万玉春","id":"669d1fad-e8f7-42ca-b175-823d0f53c1c5","originalAuthorName":"万玉春"},{"authorName":"张建军","id":"a8202941-4a0d-4bfe-989e-809e99237a8a","originalAuthorName":"张建军"},{"authorName":"刘景和","id":"2b9f89d1-a3b4-4ec2-8686-92ff9a5446ba","originalAuthorName":"刘景和"}],"doi":"","fpage":"399","id":"8c2f5fa5-29c2-4381-ba48-4fef6922a155","issue":"3","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"d2ee601b-48da-4b94-a49a-58d45b160b61","keyword":"Nd","originalKeyword":"Nd"},{"id":"fcf12fe8-270b-4d41-a19d-9b06f1429291","keyword":"NYW晶体","originalKeyword":"NYW晶体"},{"id":"bcedb4fb-bd1a-48ed-8f3c-3b64c4948586","keyword":"Nd","originalKeyword":"Nd"},{"id":"2dd72882-3a71-4db4-b176-937d9aaed29f","keyword":"NBW晶体","originalKeyword":"NBW晶体"},{"id":"0145addb-8205-486f-abca-fa1884a9a662","keyword":"拉曼光谱","originalKeyword":"拉曼光谱"},{"id":"d2333c95-2c9b-4942-8a79-3a4c5b0e0b05","keyword":"吸收光谱","originalKeyword":"吸收光谱"}],"language":"zh","publisherId":"xyjsclygc200603016","title":"Nd:NaR(WO4)2晶体光谱性能研究(R=Bi,Y)","volume":"35","year":"2006"},{"abstractinfo":"采用提拉法生长出了四方晶系白钨矿结构的Nd:NaY(WO4)2(简称Nd∶NYW)激光晶体,尺寸为20mm×30mm.通过TG-DTA差热分析得到晶体的熔点为1211℃,从XRD分析得到晶胞参数为a=b=0.5212nm ,c=1.1268nm ,晶胞体积V=0.3062nm3.讨论了Nd∶NYW晶体的生长工艺,给出了晶体生长的最佳工艺参数.通过比较Nd∶NaBi(WO4)2(简称Nd∶NBW)和Nd:NYW的XRD、红外光谱和拉曼光谱测试结果,认为二者结构基本相同,为四方晶系白钨矿结构、I(4)空间群.","authors":[{"authorName":"刘景和","id":"516c4208-d8d8-4a70-bb90-a2c410049cec","originalAuthorName":"刘景和"},{"authorName":"葛建军","id":"d80dd8f7-a78f-4767-a483-f45c8e9b342c","originalAuthorName":"葛建军"},{"authorName":"朱忠丽","id":"fc82bb1b-62fd-40ac-8a0e-c061b93350ca","originalAuthorName":"朱忠丽"},{"authorName":"王英伟","id":"b293919c-3cf8-438e-b2aa-d648f15b2de7","originalAuthorName":"王英伟"},{"authorName":"孙晶","id":"05bc9ad3-d486-4dab-afde-0e04db304a1c","originalAuthorName":"孙晶"},{"authorName":"李建立","id":"209b89b4-2dfb-4f71-bc5f-8eb9ee88ddfa","originalAuthorName":"李建立"},{"authorName":"关效贤","id":"9d6ca33b-b7c1-4046-b1db-98115766a7cb","originalAuthorName":"关效贤"}],"doi":"10.3969/j.issn.1000-985X.2003.06.023","fpage":"657","id":"fd6c715a-eacf-40e9-af21-374e3c042702","issue":"6","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"c9ea6243-67b4-4a13-b7da-3efcf0ccc9b7","keyword":"Nd∶NaY(WO4)2晶体","originalKeyword":"Nd∶NaY(WO4)2晶体"},{"id":"20459f69-502c-4df5-8479-df79fc8f80d6","keyword":"提拉法","originalKeyword":"提拉法"},{"id":"1bc7c0d7-3e0c-4554-a59f-1f18db555b30","keyword":"拉曼光谱","originalKeyword":"拉曼光谱"}],"language":"zh","publisherId":"rgjtxb98200306023","title":"Nd∶NaY(WO4)2激光晶体生长","volume":"32","year":"2003"},{"abstractinfo":"采用提拉法生长出了四方晶系白钨矿结构的掺铒钨酸钇钠晶体[分子式为Er3+:NaY(WO4)2,简称Er:NYW].通过XRD分析得到晶体的晶胞参数a=b=0.5279nm,c=1.1285nm.讨论了Er:NYW晶体的生长工艺,得出晶体生长的最佳工艺参数为:拉速2mm/h,转速35r/min,冷却速率18℃/h,最佳的轴向温度梯度为液面上0.7~1℃/mm.测试了Er:NYW晶体的Raman光谱,讨论了晶体的振动归属.由吸收光谱和荧光光谱可知,在1540、978、801 nm附近的吸收峰较强、较宽,有利于用半导体激光二极管泵浦.","authors":[{"authorName":"朱忠丽","id":"310bc5d9-9fd5-4ed4-ac18-6bf1ae769d0c","originalAuthorName":"朱忠丽"},{"authorName":"陈良","id":"c81ce35c-0c1a-44f0-a9c8-b6203a9f7697","originalAuthorName":"陈良"},{"authorName":"林海","id":"bd0a8447-8ed7-499f-99dc-43c84e502032","originalAuthorName":"林海"},{"authorName":"赵立才","id":"ed4ffdbf-b9c9-4217-9a5a-a0f6688e3e30","originalAuthorName":"赵立才"},{"authorName":"武宇芳","id":"89670f1f-0e5d-498f-9fdb-14ee55a798a9","originalAuthorName":"武宇芳"},{"authorName":"刘景和","id":"60b041ef-4624-4c4d-9632-8c199a9db4c2","originalAuthorName":"刘景和"}],"doi":"","fpage":"1008","id":"cf7247d9-3479-42e2-b8aa-fd7649ce8e11","issue":"6","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"8b305124-a27a-4c01-a363-5deeac134926","keyword":"提拉法","originalKeyword":"提拉法"},{"id":"c22a0fcc-5d7f-4b79-9f39-e20e3b3e43e6","keyword":"掺铒钨酸钇钠晶体","originalKeyword":"掺铒钨酸钇钠晶体"},{"id":"d9514b77-e1f7-4aa7-922d-2325b6758ad2","keyword":"吸收光谱","originalKeyword":"吸收光谱"},{"id":"3a7dca52-fa4f-40bd-8b26-063216690130","keyword":"荧光光谱","originalKeyword":"荧光光谱"}],"language":"zh","publisherId":"xyjsclygc200806015","title":"Er3+:NaY(WO4)2晶体的生长与性能","volume":"37","year":"2008"},{"abstractinfo":"用Czochralski 法生长了高光学质量、大尺寸的NaY(WO4)2∶Sm3+单晶.测量了晶体在室温下的吸收谱,对跃迁的能级进行了指认.在946nm泵浦下测量了晶体的上转换荧光发射谱.研究了NYW晶体中Sm3+上转换发光的机制.","authors":[{"authorName":"程振祥","id":"bce20068-b74f-44db-9f78-e99e473d632c","originalAuthorName":"程振祥"},{"authorName":"张树君","id":"50538498-24ca-47d1-9a2b-00ae13cc0332","originalAuthorName":"张树君"},{"authorName":"宋峰","id":"8572230d-af7f-4bd6-b82a-e1b4c5da2a72","originalAuthorName":"宋峰"},{"authorName":"郭红沧","id":"20ccb7e8-cf4c-4ef1-a82a-3684aa804a02","originalAuthorName":"郭红沧"},{"authorName":"刘雪松","id":"72bd4efd-fa0b-4f7f-ad1d-0dad45d3b6fe","originalAuthorName":"刘雪松"},{"authorName":"韩建儒","id":"6fbb56ea-2344-4d0a-8e37-b679cfbdd6f6","originalAuthorName":"韩建儒"},{"authorName":"陈焕矗","id":"29b18576-84cb-48dd-ac64-e98e2508d11c","originalAuthorName":"陈焕矗"}],"doi":"10.3969/j.issn.1000-985X.2001.03.007","fpage":"256","id":"363c9c26-b7f1-4deb-96d8-428691691b49","issue":"3","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"62a4fe4c-d8d6-49d4-938c-ab468b755384","keyword":"NaY(WO4)2晶体","originalKeyword":"NaY(WO4)2晶体"},{"id":"6c23d37e-9f49-43ef-85c3-4e9616b37e9f","keyword":"Sm3+离子","originalKeyword":"Sm3+离子"},{"id":"3f12601f-042b-4be7-a915-b9d5fd54171e","keyword":"上转换","originalKeyword":"上转换"}],"language":"zh","publisherId":"rgjtxb98200103007","title":"NaY(WO4)2∶Sm3+晶体的生长与上转换发光","volume":"30","year":"2001"},{"abstractinfo":"本文扼要地综述了20世纪后半叶人工晶体发展的简况,其中包括块状晶体、薄膜晶体、纤维晶体、纳米晶体.最后在已取得成就的基础上,展望了人工晶体发展的未来.","authors":[{"authorName":"张克从","id":"e537a39e-5ef7-4d60-8d35-5d15cfa4c83e","originalAuthorName":"张克从"},{"authorName":"王希敏","id":"ca879cb7-3aa8-44f4-8e38-3986222009b3","originalAuthorName":"王希敏"}],"doi":"10.3969/j.issn.1000-985X.2002.03.008","fpage":"228","id":"20edc485-0134-4a9b-b43b-350f5438679a","issue":"3","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"621b638e-ea46-43f7-9a0c-299fd73641d5","keyword":"人工晶体","originalKeyword":"人工晶体"},{"id":"df815fa3-cffe-48b9-b964-8460fd87e1c1","keyword":"发展","originalKeyword":"发展"},{"id":"c8479a1a-9274-4935-8e6f-b4d7f785044d","keyword":"展望","originalKeyword":"展望"}],"language":"zh","publisherId":"rgjtxb98200203008","title":"人工晶体的发展","volume":"31","year":"2002"},{"abstractinfo":"本文考察了一些典型的晶体材料及其工业生长技术,如提拉法生长硅单晶,水热法生长水晶,VGF法生长GaAs,下降法生长锗酸铋,壳熔法生长锆石等,探讨了工业晶体生长的特点和发展方向.","authors":[{"authorName":"徐家跃","id":"6ed23511-efc8-4cb8-9291-bbc607302893","originalAuthorName":"徐家跃"}],"doi":"","fpage":"591","id":"68bf1c25-d53d-47e8-bbeb-37f4253bfaa4","issue":"3","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"3c30a6d4-e9bc-47c0-ab8f-ab585c772b36","keyword":"晶体生长","originalKeyword":"晶体生长"},{"id":"7861ca93-4277-4902-a1b1-e0e026ad926d","keyword":"提拉法","originalKeyword":"提拉法"},{"id":"7b149cef-1904-4d38-865d-3f0aa9d003d2","keyword":"水热法","originalKeyword":"水热法"},{"id":"c825900f-d991-40f5-acff-3ad5ad2c5fb5","keyword":"下降法","originalKeyword":"下降法"},{"id":"cc6ed995-711d-496b-b0ef-255e38a25d2d","keyword":"模拟","originalKeyword":"模拟"}],"language":"zh","publisherId":"rgjtxb98200903012","title":"工业晶体生长","volume":"38","year":"2009"},{"abstractinfo":"功能晶体材料是光电功能材料的主体.本文概述了功能晶体材料从天然晶体到人工晶体,从电子材料到光电子材料的发展历程,并着重探讨了今后的发展动向.","authors":[{"authorName":"蒋民华","id":"2e5acf9f-fd58-4850-9c1b-34d024b63dff","originalAuthorName":"蒋民华"}],"doi":"","fpage":"11","id":"f3db1f03-b54c-4519-8fea-14ecf94adcaf","issue":"z1","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"46aa2915-0434-451c-ae79-0e91c5ec4e22","keyword":"功能晶体材料","originalKeyword":"功能晶体材料"},{"id":"d836b7f3-1f69-4f55-b7d3-d33eec4a484d","keyword":"电子材料","originalKeyword":"电子材料"},{"id":"41f12cb0-6c28-4e2b-a047-a3f35e087cc1","keyword":"光电子材料","originalKeyword":"光电子材料"},{"id":"af93c1fc-addd-4ab4-a6c7-10c124b2818b","keyword":"发展动向","originalKeyword":"发展动向"}],"language":"zh","publisherId":"gncl2004z1003","title":"功能晶体材料的发展","volume":"35","year":"2004"},{"abstractinfo":"声子晶体是一种新型的声学功能材料,对声子晶体的研究引起了各国研究机构的极大关注.文章介绍了声子晶体的概念及基本特征,阐述了声子晶体禁带机理及声子晶体的各种潜在应用领域,最后对声子晶体的研究发展作了展望.","authors":[{"authorName":"温激鸿","id":"42827d0e-dbc7-430c-9f2f-c55276e79d47","originalAuthorName":"温激鸿"},{"authorName":"韩小云","id":"45c8cccc-6ceb-4250-b915-ad7081f5ff3e","originalAuthorName":"韩小云"},{"authorName":"王刚","id":"363b56c9-7b59-425f-9698-f1dbb5ccd3f5","originalAuthorName":"王刚"},{"authorName":"赵宏刚","id":"6ddd38e5-bbee-4465-be31-ef5d43d9bf7a","originalAuthorName":"赵宏刚"},{"authorName":"刘耀宗","id":"b17fe2e3-df47-43ad-ba8e-22f80b295f01","originalAuthorName":"刘耀宗"}],"doi":"","fpage":"364","id":"422abcc5-1e96-49a2-b507-4bda51b85096","issue":"4","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"70aefd01-d990-49c6-83c1-2720fa49cc41","keyword":"声子晶体","originalKeyword":"声子晶体"},{"id":"85ea2a1b-1c72-4c73-a722-015e35cfa6fc","keyword":"弹性波禁带","originalKeyword":"弹性波禁带"},{"id":"fc0f69da-d966-4030-bc31-3a286309eabe","keyword":"减振降噪","originalKeyword":"减振降噪"}],"language":"zh","publisherId":"gncl200304004","title":"声子晶体研究概述","volume":"34","year":"2003"},{"abstractinfo":"采用中频感应提拉法生长了Yb:FAP晶体.对晶体生长中影响晶体质量的因素特别是原料的处理、CaF2的挥发等进行了研究和讨论.运用ICP-AES测定Yb3+离子在Yb:FAP晶体中的分凝系数.对Yb:FAP晶体进行了高分辨X射线的四圆衍射实验,结果表明晶体具有比较高的晶格完整性.","authors":[{"authorName":"宋平新","id":"a804a36d-f836-4d1e-a234-1fd8f1087e91","originalAuthorName":"宋平新"},{"authorName":"赵志伟","id":"b959ba83-c67b-4804-ad26-5ba7fcdc6a55","originalAuthorName":"赵志伟"},{"authorName":"徐晓东","id":"365dea2b-b748-4297-a871-170d7abc66ce","originalAuthorName":"徐晓东"},{"authorName":"姜本学","id":"3389303a-8e9f-44d0-9b35-350ca67479ee","originalAuthorName":"姜本学"},{"authorName":"邓佩珍","id":"0a452be6-c6dd-46d0-8e14-471e6a57ab2d","originalAuthorName":"邓佩珍"},{"authorName":"徐军","id":"209b8b27-2bd2-4770-97d0-01092b2449be","originalAuthorName":"徐军"}],"doi":"10.3969/j.issn.1000-985X.2005.04.003","fpage":"581","id":"76af7db7-330f-4c7e-89d2-ec38a4a41d7c","issue":"4","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"bc10d27f-2aab-4d06-8a8c-aa1a8521d75d","keyword":"Yb:FAP晶体","originalKeyword":"Yb:FAP晶体"},{"id":"340831d3-b22e-4e47-9f4f-6de47cb47fd6","keyword":"晶体生长","originalKeyword":"晶体生长"},{"id":"90fad076-69e0-46ce-8942-313467812671","keyword":"原料","originalKeyword":"原料"},{"id":"b41f4664-d00a-4420-ba40-06208d17b355","keyword":"挥发物","originalKeyword":"挥发物"},{"id":"396c0788-d2ed-4ccb-aca7-d217ddcd1e44","keyword":"分凝系数","originalKeyword":"分凝系数"}],"language":"zh","publisherId":"rgjtxb98200504003","title":"Yb:FAP晶体生长","volume":"34","year":"2005"},{"abstractinfo":"熔化是自然界中的一种普遍现象,也是材料的重要相变过程之一。本文综述近年来晶体熔化过程研究取得的主要结果和最新进展,着重论述晶体界面对熔化过程的影响和过热晶体的获得,并分析晶体过热的极限。","authors":[{"authorName":"卢柯","id":"152247c9-b56d-4b29-b035-1e2999b955b5","originalAuthorName":"卢柯"},{"authorName":"生红卫","id":"f54fd938-e80b-456d-8994-bc4458f3eb59","originalAuthorName":"生红卫"},{"authorName":"金朝晖","id":"6940f919-1a6c-4b0d-a4cd-3b7f2f0b0aeb","originalAuthorName":"金朝晖"}],"categoryName":"|","doi":"","fpage":"658","id":"5d455fa3-7545-439c-8aa4-fe994cec5f36","issue":"6","journal":{"abbrevTitle":"CLYJXB","coverImgSrc":"journal/img/cover/CLYJXB.jpg","id":"16","issnPpub":"1005-3093","publisherId":"CLYJXB","title":"材料研究学报"},"keywords":[{"id":"925c9f8b-23b7-45fa-9f01-8008f615028d","keyword":"熔化","originalKeyword":"熔化"},{"id":"68304a16-fc1e-4319-93a3-550c3b9973fd","keyword":"null","originalKeyword":"null"},{"id":"bbc4c200-4b3d-47c5-a7c5-fa155d28306a","keyword":"null","originalKeyword":"null"}],"language":"zh","publisherId":"1005-3093_1997_6_2","title":"晶体的熔化和过热","volume":"11","year":"1997"}],"totalpage":1149,"totalrecord":11489}