人工晶体学报, 2012, 41(2): 430-435.
不同硫源对微波水热法制备SnS粉体结构和光学性能的影响
张培培
1,
, 黄剑锋
2,
, 曹丽云
a-SiOx:H、a-SiNx:H,和a-SiOx:H/a-SiNx:H叠层系统,比较了不同钝化膜对多晶硅太阳能电池发射极和背面钝化效果,应用FGA、RTP等热处理方法对钝化膜进行处理,重点讨论了FGA(Forming gas annealing)温度和时间的长短对钝化的影响.结果表明:低温FGA对只有单面钝化膜的硅片钝化效果不明显,而在800 ℃下FGA有明显作用,而且钝化效果随着时间的增加呈现出先增大后减小然后再增大的现象;退火后降温环境中是否有H和降温时间对钝化效果有很大的影响,但是对于双面膜无论FGA温度高低对钝化都有帮助,文中对上述现象做了合理的解释.最后利用双面叠层钝化膜经过FGA处理后得到的多晶硅片的少子寿命达到14.2 μs,比镀膜之前的3.0 μs提高了11.2 μs,使多晶硅太阳能电池暗电压 Voc达到630 mV.","authors":[{"authorName":"王振交","id":"bbc3c6da-0a2f-4a67-a157-ed1a631cb6f5","originalAuthorName":"王振交"},{"authorName":"季静佳","id":"c2c8421a-b73d-48e8-b302-a5291389906e","originalAuthorName":"季静佳"},{"authorName":"施正荣","id":"e9db76d3-a664-41f3-b9eb-a51b0b9f46b7","originalAuthorName":"施正荣"},{"authorName":"李果华","id":"2ab3607c-7889-4107-bed0-e61191b5c98e","originalAuthorName":"李果华"}],"doi":"","fpage":"387","id":"94785e86-dbd6-4818-985d-7f10399844fc","issue":"2","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"faa264c9-a976-40f1-89c8-f53f7f5e0862","keyword":"PECVD","originalKeyword":"PECVD"},{"id":"408506a7-ae0a-4936-b94b-6b3e5447ad52","keyword":"a-SiOx:H/a-SiNx:H","originalKeyword":"a-SiOx:H/a-SiNx:H"},{"id":"4a5e12b3-4d34-4b45-8a83-d83dac67babe","keyword":"少子寿命","originalKeyword":"少子寿命"},{"id":"f4d9b831-1b81-4a87-a1d5-b2b4e21569fe","keyword":"FGA","originalKeyword":"FGA"},{"id":"b1c539e6-bf93-49ac-aa2b-ee1f517be869","keyword":"多晶硅","originalKeyword":"多晶硅"}],"language":"zh","publisherId":"rgjtxb98200902022","title":"Direct-PECVD a-SiOx:H/a-SiNx:H 叠层系统对多晶硅电池的钝化研究","volume":"38","year":"2009"},{"abstractinfo":"A systematic investigation of the role of hydrogen in hydrogenated amorphous substo-ichiometric silicon oxide films (a-SiOx :H) implanted with erbium is presented. Theexperimental results show that Er3+ luminescence increases with annealing tempera-ture up to 535℃ and then drop sharply. Our work suggests that hydrogen evolutionduring annealing below 535℃ results in a reduction of defects in the films, and hencean improved Er3+ emission.","authors":[{"authorName":"C.Y.Chen","id":"592e86eb-965b-4972-951a-4457c33a3e92","originalAuthorName":"C.Y.Chen"},{"authorName":" W.D.Chen","id":"85d39bb6-ba95-4c0b-a344-7581582e9649","originalAuthorName":" W.D.Chen"},{"authorName":" Y.Q.Wang","id":"08381dc1-0a74-409d-a835-9ff82b3294cf","originalAuthorName":" Y.Q.Wang"}],"categoryName":"|","doi":"","fpage":"87","id":"2798a99f-2f2c-43db-a6d5-500316e46819","issue":"1","journal":{"abbrevTitle":"JSXBYWB","coverImgSrc":"journal/img/cover/amse.jpg","id":"49","issnPpub":"1006-7191","publisherId":"JSXBYWB","title":"金属学报(英文版)"},"keywords":[{"id":"b1729e31-d26e-4090-b432-b0ec284a144c","keyword":"photoluminescence","originalKeyword":"photoluminescence"},{"id":"292f9c94-5a86-4274-97bd-e056d393a51f","keyword":"null","originalKeyword":"null"},{"id":"f8a5af16-9b00-4b68-baeb-ae1dd2d62550","keyword":"null","originalKeyword":"null"}],"language":"en","publisherId":"1006-7191_2002_1_11","title":"THE ROLE OF HYDROGEN IN Er-IMPLANTED a-SiOx:H","volume":"15","year":"2002"},{"abstractinfo":"利用红外光谱研究了等离子体化学气相沉积(PECVD)方法淀积的a-SiNx:H薄膜.分析了气体流量比(R)、衬底温度(Ts)以及射频功率(Prf)的变化对a-SiNx:H薄膜中SiH、 NH和NH2基团的吸收峰强度的影响, 同时研究了退火条件对a-SiNx:H薄膜中含氢基团的影响.","authors":[{"authorName":"朱永福","id":"b062d4d8-9127-4b12-a5fe-c41c5bfa6cb6","originalAuthorName":"朱永福"},{"authorName":"李牧菊","id":"76b57193-94c5-462a-acef-99b7918e68fa","originalAuthorName":"李牧菊"},{"authorName":"杨柏梁","id":"a1bba7bf-7e24-400c-8039-afb3eb1c5edc","originalAuthorName":"杨柏梁"},{"authorName":"刘传珍","id":"135c17dd-30a8-43e4-bd24-c09d5e3739ce","originalAuthorName":"刘传珍"},{"authorName":"廖燕平","id":"1d262725-04a9-443a-9939-a11ef428f6af","originalAuthorName":"廖燕平"},{"authorName":"袁剑锋","id":"b1bb2fe9-93b2-4995-bdb8-568ad05687ea","originalAuthorName":"袁剑锋"},{"authorName":"刘雅言","id":"acce58c7-b08e-47e3-8319-d23f7efaae00","originalAuthorName":"刘雅言"},{"authorName":"申德振","id":"c435332e-0b4c-4b1f-a607-637cf45b7288","originalAuthorName":"申德振"}],"doi":"10.3969/j.issn.1007-2780.1999.04.008","fpage":"278","id":"d4998d6c-64de-40bb-b5e0-24f0737d3f74","issue":"4","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示 "},"keywords":[{"id":"ea933752-a7ae-4483-937c-b0ff6eb38d95","keyword":"等离子体化学气相沉积","originalKeyword":"等离子体化学气相沉积"},{"id":"7c5f8b19-10d0-419e-9c08-59efb192743e","keyword":"非晶氮化硅薄膜","originalKeyword":"非晶氮化硅薄膜"},{"id":"d979b24a-accb-42a7-9338-7319f8a614db","keyword":"红外光谱","originalKeyword":"红外光谱"}],"language":"zh","publisherId":"yjyxs199904008","title":"淀积条件对a-SiNx:H薄膜中含氢基团的影响","volume":"14","year":"1999"},{"abstractinfo":"使用微波电子回旋共振等离子体化学气相沉积(ECR-CVD)方法室温生长了非晶氢化的氮化硅薄膜,通过改变前驱气体(SiH4+80%Ar和NH3)的流量比,研究了薄膜的生长速率、等离子体的发射光谱和薄膜的红外特性.结果表明:随着NH3流量的增加,氮化硅薄膜的生长速率呈下降趋势,这主要是由于等离子体中的气相前驱成分之一硅基团浓度的不断下降所导致的;随着NH3流量的增加,薄膜中键合了较多的具有较高电负性的N原子是Si-N和Si-H伸缩振动发生蓝移的主要原因.红外光谱的定量计算表明所制备的氮化硅薄膜具有相对较低的H浓度,约15%左右.文中对氮化硅薄膜的生长机制也进行了讨论.","authors":[{"authorName":"鲁涛","id":"d4a11b90-c26f-4cc6-8a0d-3826bf72a92d","originalAuthorName":"鲁涛"},{"authorName":"辛煜","id":"17a176fa-541e-49c9-bb74-1d5fddfb1e19","originalAuthorName":"辛煜"},{"authorName":"吴雪梅","id":"461aabbf-fefd-44f4-8fd7-437a9b751c84","originalAuthorName":"吴雪梅"}],"doi":"10.3969/j.issn.1007-4252.2006.04.002","fpage":"259","id":"7900379c-b0e4-43d1-9c69-b0a9fefefc52","issue":"4","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报 "},"keywords":[{"id":"7623c5f3-7362-4bc7-888e-9fca1abd0a22","keyword":"ECR-CVD","originalKeyword":"ECR-CVD"},{"id":"10b00c9b-321f-44bb-9cd0-e66e74d4bb7e","keyword":"a-SiNx:H薄膜","originalKeyword":"a-SiNx:H薄膜"},{"id":"7eea4d86-b1a6-4e47-9925-facb3523255e","keyword":"发射光谱","originalKeyword":"发射光谱"},{"id":"af822934-3e3e-4c40-b7bb-a7a2d68b4673","keyword":"红外光谱","originalKeyword":"红外光谱"}],"language":"zh","publisherId":"gnclyqjxb200604002","title":"ECR-CVD方法生长a-SiNx:H薄膜的研究","volume":"12","year":"2006"},{"abstractinfo":"","authors":[{"authorName":"","id":"630571e3-d0c0-4b8b-9ae8-e68ab884e46c","originalAuthorName":""},{"authorName":"","id":"0364e1be-c594-4327-8b7d-5ee1ea7159f3","originalAuthorName":""},{"authorName":"","id":"ebc2f703-6f83-42eb-ab61-271fac5af4b4","originalAuthorName":""},{"authorName":"","id":"1d94f6e2-db75-4ffb-a08d-9a59282575a9","originalAuthorName":""},{"authorName":"","id":"23985dec-464a-4521-9ab8-b25a3b436f1d","originalAuthorName":""}],"doi":"","fpage":"87","id":"c2aa63e7-1565-4157-bfbe-d7ab55d4b83c","issue":"1","journal":{"abbrevTitle":"JSXBYWB","coverImgSrc":"journal/img/cover/amse.jpg","id":"49","issnPpub":"1006-7191","publisherId":"JSXBYWB","title":"金属学报(英文版)"},"keywords":[{"id":"7e3e4413-e645-4d41-b7d5-dc07170616e4","keyword":"","originalKeyword":""}],"language":"zh","publisherId":"jsxb-e200201017","title":"THE ROLE OF HYDROGEN IN Er-IMPLANTED a-SiOx:H","volume":"15","year":"2002"},{"abstractinfo":"采用射频磁控反应溅射技术制备不同Si层厚度的a-Si/a-SiNx超晶格材料.利用红外光谱(IR)、能谱(EDS)、X射线衍射谱(XRD)、吸收谱和光致发光(PL)谱对超晶格材料的成分、结构和发光特性进行研究.结果表明,样品的光学吸收边和PL峰随着Si层的厚度的变化而发生明显偏移,观察到了明显的量子限制效应.在氮气保护下以1000℃对样品进行热退火处理,发现Si层厚的样品退火后发光峰相对于退火前发生了蓝移,这归因于样品中nc-Si颗粒的形成.","authors":[{"authorName":"张春华","id":"48136192-0db2-407d-8a88-954ff1b14f33","originalAuthorName":"张春华"},{"authorName":"郭亨群","id":"5995a9ad-e63e-408a-a9fb-a85237c56996","originalAuthorName":"郭亨群"},{"authorName":"王国立","id":"c75e03a4-8e55-4d73-93d8-667ef520ff7b","originalAuthorName":"王国立"},{"authorName":"申继伟","id":"1fad9074-7076-4bbb-856c-981cac3eaaa4","originalAuthorName":"申继伟"},{"authorName":"徐骏","id":"78de34c9-f59d-445a-8955-889825118d91","originalAuthorName":"徐骏"},{"authorName":"陈坤基","id":"f4cc0600-f191-4d69-aa46-fba6260d7595","originalAuthorName":"陈坤基"}],"doi":"10.3969/j.issn.1007-4252.2009.03.002","fpage":"223","id":"efcbc0ff-00c4-481f-8200-6e98e45f1a78","issue":"3","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报 "},"keywords":[{"id":"2a8a6e7d-a39d-4690-a28b-29cc3fa8ebff","keyword":"a-Si/a-SiNx超晶格","originalKeyword":"a-Si/a-SiNx超晶格"},{"id":"04525f3f-ca21-4b59-82bd-44ae2d0d1051","keyword":"光致发光","originalKeyword":"光致发光"},{"id":"24a4375f-61c9-4bb5-8626-ad276528caf0","keyword":"量子限制效应","originalKeyword":"量子限制效应"},{"id":"0c0c7320-0563-4add-86c9-76491b654b27","keyword":"射频磁控反应溅射","originalKeyword":"射频磁控反应溅射"}],"language":"zh","publisherId":"gnclyqjxb200903002","title":"a-Si/a-SiNx超晶格材料光学特性","volume":"15","year":"2009"},{"abstractinfo":"采用扫描电子显微镜(SEM)、原子力显微镜(AFM)和X射线光电子能谱(XPS)测试方法对4H-SiC上热氧化生长的氧化硅(SiOx)薄膜表面形貌进行观测,并分析研究SiOx薄膜和SiOx/4H-SiC界面的相关性质,包括拟合Si2p、O1s和C1s的XPS谱线和分析其相应的结合能,以及分析SiOx层中各主要元素随不同深度的组分变化情况,从而获得该热氧化SiOx薄膜的化学组成和化学态结构,并更好地了解其构成情况以及SiOx/4H-SiC的界面性质.","authors":[{"authorName":"陈厦平","id":"7c9b3833-7dee-43be-b551-73831aeae037","originalAuthorName":"陈厦平"},{"authorName":"朱会丽","id":"730abaf1-480b-4346-be03-5deff611b33d","originalAuthorName":"朱会丽"},{"authorName":"蔡加法","id":"08310204-61dc-4a61-8b27-bcb20d853f1f","originalAuthorName":"蔡加法"}],"doi":"10.3969/j.issn.1007-5461.2010.04.016","fpage":"474","id":"71af6b8b-19f5-4743-a387-d46939b69dfc","issue":"4","journal":{"abbrevTitle":"LZDZXB","coverImgSrc":"journal/img/cover/LZDZXB.jpg","id":"53","issnPpub":"1007-5461","publisherId":"LZDZXB","title":"量子电子学报 "},"keywords":[{"id":"1ccedfbf-73a9-466c-a555-2d45e44d2e6f","keyword":"材料","originalKeyword":"材料"},{"id":"b8f72576-9858-4628-8660-75fe42ef0c0b","keyword":"SiOx薄膜","originalKeyword":"SiOx薄膜"},{"id":"7880c58e-993e-40e6-ba11-a11752ecf044","keyword":"热氧化","originalKeyword":"热氧化"},{"id":"8a872fe9-493b-49fe-983c-b49e18cecb1f","keyword":"X射线光电子能谱","originalKeyword":"X射线光电子能谱"},{"id":"b252becb-e259-4ca6-a527-f1ea7e5cef74","keyword":"4H-SiC","originalKeyword":"4H-SiC"}],"language":"zh","publisherId":"lzdzxb201004016","title":"4H-SiC表面热氧化生长SiOx薄膜特性的研究","volume":"27","year":"2010"},{"abstractinfo":"利用等离子化学气相沉积法连续制备SiNx∶H和a-Si∶H薄膜.通过电学、光学、力学测试研究了SiNx∶H薄膜沉积条件对其界面性能的影响.研究结果表明,过度的富硅化将显著增大体系的界面态,严重影响器件的TFT特性.当SiH4和NH3气体流量比值为7∶15时,开关比(Ion/Ioff)可达3.24×10 7.适当增加功率同样可以提高Ion,但高于31.5 W/cm2后,只会严重地增大薄膜的应力.优化SiNx∶H的沉积参数,开关比可以提高5.5倍.","authors":[{"authorName":"李婧","id":"80e35083-1190-4b55-b568-314cb02b86a2","originalAuthorName":"李婧"},{"authorName":"张金中","id":"1b09a2bd-afe1-4c1e-8f36-63f5fdf27d78","originalAuthorName":"张金中"},{"authorName":"谢振宇","id":"1b4a8eb0-5f91-46de-8fbf-a620a1290541","originalAuthorName":"谢振宇"},{"authorName":"阎长江","id":"a9b67c2a-c2a2-44bd-9b98-fe744ee9cd85","originalAuthorName":"阎长江"},{"authorName":"陈旭","id":"6d188aa5-1eff-494f-ab93-bd5e123cbb4b","originalAuthorName":"陈旭"},{"authorName":"闵泰烨","id":"27493749-9f05-4674-933d-9c37ae3649b1","originalAuthorName":"闵泰烨"}],"doi":"10.3788/YJYXS20132804.0547","fpage":"547","id":"d068fa75-eec1-4d28-9f80-d91dda8bc1b6","issue":"4","journal":{"abbrevTitle":"YJYXS","coverImgSrc":"journal/img/cover/YJYXS.jpg","id":"72","issnPpub":"1007-2780","publisherId":"YJYXS","title":"液晶与显示 "},"keywords":[{"id":"6647164c-4b9d-438d-a925-91b0f8527670","keyword":"SiNx∶H界面态","originalKeyword":"SiNx∶H界面态"},{"id":"5f60c8d9-6c45-4d44-b669-e176572ef28e","keyword":"Si/N","originalKeyword":"Si/N"},{"id":"ec2ca02e-78aa-4c3e-b51c-379a09b32228","keyword":"开关比","originalKeyword":"开关比"},{"id":"84008d18-e20d-4cce-8005-07cec81d7e0f","keyword":"TFT特性","originalKeyword":"TFT特性"}],"language":"zh","publisherId":"yjyxs201304013","title":"SiNx∶H薄膜沉积条件变更对TFT特性的影响","volume":"28","year":"2013"},{"abstractinfo":"SiNx:H薄膜因为具有良好的减反射性质和钝化作用,在晶体硅太阳电池(单晶硅、多晶硅)的研究和生产中得到越来越广泛的应用.介绍了SiNx:H薄膜在硅基太阳电池中的减反射和钝化作用,主要制备方法等研究现状,以及面临的问题和今后的研究趋势.","authors":[{"authorName":"唐煜","id":"ebfbddf9-6e06-42fa-8963-3768f7df07c6","originalAuthorName":"唐煜"},{"authorName":"周春兰","id":"32e9df06-83f9-46be-8cbc-71f968fb73e7","originalAuthorName":"周春兰"},{"authorName":"贾晓昀","id":"e36b7e71-bd41-432f-8ad0-0356cd6f38c0","originalAuthorName":"贾晓昀"},{"authorName":"王文静","id":"a0de4cf8-5baa-4e58-8ec1-d6c1e9dcff64","originalAuthorName":"王文静"}],"doi":"","fpage":"247","id":"07a79c35-534a-4b2e-a8c0-12cc13cef1f3","issue":"z1","journal":{"abbrevTitle":"CLDB","coverImgSrc":"journal/img/cover/CLDB.jpg","id":"8","issnPpub":"1005-023X","publisherId":"CLDB","title":"材料导报"},"keywords":[{"id":"ebd41e1f-c54e-4fd1-9f60-35f59f7da075","keyword":"太阳电池","originalKeyword":"太阳电池"},{"id":"7a597168-1940-4124-87dd-2da60197f1ab","keyword":"SiNx","originalKeyword":"SiNx"},{"id":"8e185211-177a-43b3-8b37-1e8e6b0ae3d4","keyword":"H","originalKeyword":"H"},{"id":"11073515-0b84-4c0f-9c56-f99b65d4b6d6","keyword":"钝化","originalKeyword":"钝化"},{"id":"a3c4958a-76f9-4917-aed7-8f7eb9676d12","keyword":"减反射","originalKeyword":"减反射"}],"language":"zh","publisherId":"cldb2008z1077","title":"Si基太阳电池用SiNx:H薄膜的研究进展","volume":"22","year":"2008"},{"abstractinfo":"采用 PECVD技术制备的 a－ SiOx:H (0